Silicon PIN Diode
Silicon PIN Diode
q
BXY 42BA-7
Fast switching
ESD: Electrostatic discharge sensitive device, observe handling precaut...
Description
Silicon PIN Diode
q
BXY 42BA-7
Fast switching
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BXY 42BA-7 Marking 27 Ordering Code Q62702-X160 Pin Configuration Package1) Cerec-X
Maximum Ratings Parameter Reverse voltage Peak forward current, tp = 1 µs Total power dissipation Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction – ambient2) Rth JA
≤
Symbol VR IFRM Ptot Tj Tstg Top
Values 50 5 350 175 – 55 … + 150 – 55 … + 150
Unit V A mW ˚C
450
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
BXY 42BA-7
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 10 µA Reverse current VR = 40 V Storage time IF = 10 mA, VR = 10 V Diode capacitance VR = 20 V, f = 1 MHz Charge carrier life time IF = 10 mA, IR = 6 mA Forward resistance f = 100 MHz, IF = 10 mA Symbol min. V(BR) IR ts CT
τL
Values typ. – – 4 – 40 1.5 max. – 5 – 0.2 – – 50 – – – – –
Unit V nA ns pF ns Ω
rf
...
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