BY249-300

Philips Semiconductors Product specification Rectifier diodes general purpose FEATURES Low forward volt drop High thermal cycling performance Low thermal resistance BY249 series SYMBOL QUICK REFERENCE DATA VR = 300 V / 600 V / 800 V VF ≤ 1.05 V IF(AV) = 7 A IFSM ≤ 60 A k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diodes. The devices are intended for low frequency power rectifier applications. The BY249 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRSM VRRM VRWM VR IF(AV) IF(RMS) IFRM IFSM Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current1 RMS forward current Peak repetitive forward current Peak non-repetitive forward current. I2t for fusing Storage temperature Operating junction temperature sinusoidal; a = 1.57; Tmb ≤ 131 ˚C sinusoidal; a = 1.57; t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) t = 10 ms CONDITIONS BY249 -40 MIN. MAX.UNIT -300 300 300 200 200 -600 600 600 500 500 7 11 60 60 66 18 150 150 -800 800 800 700 700 UNIT V V V V A A A A A A2s ˚C ˚C I2t Tstg Tj 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.300 Philips Semiconductors Product specificati...