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BY251

EIC discrete Semiconductors

SILICON RECTIFIER DIODES

BY251 - BY255 PRV : 200 - 1300 Volts Io : 3.0 Amperes FEATURES : * * * * * High current capability High surge current ca...


EIC discrete Semiconductors

BY251

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BY251 - BY255 PRV : 200 - 1300 Volts Io : 3.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES DO - 201AD 1.00 (25.4) MIN. 0.21 (5.33) 0.19 (4.83) 0.375 (9.53) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.929 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 3.0 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF BY251 200 140 200 BY252 400 280 400 BY253 600 420 600 3.0 BY254 800 560 800 BY255 1300 910 1300 UNIT V V V A IFSM VF IR IR(H) CJ RθJA TJ TSTG 100 1.1 20 50 50 18 - 65 to + 175 - 65 to + 175 A V µA µA pF °C/W °C °C Typical Junc...




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