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BY252 Dataheets PDF



Part Number BY252
Manufacturers EIC discrete Semiconductors
Logo EIC discrete Semiconductors
Description SILICON RECTIFIER DIODES
Datasheet BY252 DatasheetBY252 Datasheet (PDF)

BY251 - BY255 PRV : 200 - 1300 Volts Io : 3.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES DO - 201AD 1.00 (25.4) MIN. 0.21 (5.33) 0.19 (4.83) 0.375 (9.53) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode en.

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BY251 - BY255 PRV : 200 - 1300 Volts Io : 3.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES DO - 201AD 1.00 (25.4) MIN. 0.21 (5.33) 0.19 (4.83) 0.375 (9.53) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.929 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 3.0 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF BY251 200 140 200 BY252 400 280 400 BY253 600 420 600 3.0 BY254 800 560 800 BY255 1300 910 1300 UNIT V V V A IFSM VF IR IR(H) CJ RθJA TJ TSTG 100 1.1 20 50 50 18 - 65 to + 175 - 65 to + 175 A V µA µA pF °C/W °C °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 01 : Mar 23, 2002 RATING AND CHARACTERISTIC CURVES ( BY251 - BY255 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 3.0 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 AVERAGE FORWARD OUTPUT CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES Ta = 25 ° C 80 2.4 1.8 60 1.2 40 0.6 20 NON-REPETITIVE 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( ° C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS JUNCTION CAPACITANCE, (pF) NUMBER OF CYCLES AT 60Hz FIG 4 . - TYPICAL JUNCTION CAPACITANCE 100 100 50 FORWARD CURRENT, AMPERES T J = 25 ° C 10 10 5 Pulse W idth = 300 µs 2% Duty Cycle 1.0 T J = 25 ° C 1 1 2 4 10 20 40 100 REVERSE VOLTAGE, VOLTS 0.1 REVERSE CURRENT, MICROAMPERES FIG. 5 - TYPICAL REVERSE CHARACTERISTICS 10 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Ta = 100 ° C 1.0 0.1 Ta = 25 ° C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 01 : Mar 23, 2003 .


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