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BY329-1500S Dataheets PDF



Part Number BY329-1500S
Manufacturers NXP
Logo NXP
Description Damper diode fast/ high-voltage
Datasheet BY329-1500S DatasheetBY329-1500S Datasheet (PDF)

Philips Semiconductors Product specification Damper diode fast, high-voltage FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance BY329-1500, BY329-1500S SYMBOL QUICK REFERENCE DATA VR = 1500 V VF ≤ 1.35 V / 1.5 V IF(peak) = 6 A (f = 16 kHz) IF(peak) = 6 A (f = 70 kHz) IFSM ≤ 75 A trr ≤ 230 ns / 160 ns k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode featuring low forward v.

  BY329-1500S   BY329-1500S


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Philips Semiconductors Product specification Damper diode fast, high-voltage FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance BY329-1500, BY329-1500S SYMBOL QUICK REFERENCE DATA VR = 1500 V VF ≤ 1.35 V / 1.5 V IF(peak) = 6 A (f = 16 kHz) IF(peak) = 6 A (f = 70 kHz) IFSM ≤ 75 A trr ≤ 230 ns / 160 ns k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The device is intended for use in TV receivers and PC monitors. The BY329 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab 1 2 LIMITING VALUES Limiting values accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRSM VRRM VRWM IF(peak) IFRM IF(RMS) IFSM Tstg Tj Peak non-repetitive peak reverse voltage Peak repetitive reverse voltage Crest working reverse voltage BY329 Peak working forward current Peak repetitive forward current RMS forward current Peak non-repetitive forward current Storage temperature Operating junction temperature f = 16 kHz f = 70 kHz t = 25 µs; δ = 0.5; Tmb ≤ 123 ˚C t = 10 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) -40 CONDITIONS MIN. MAX. 1500 1500 1300 -1500 6 14 11 75 150 150 -1500S 6 UNIT V V V A A A A A ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a CONDITIONS MIN. TYP. 60 MAX. 2.0 UNIT K/W K/W Thermal resistance junction to mounting base Thermal resistance junction to in free air ambient September 1998 1 Rev 1.100 Philips Semiconductors Product specification Damper diode fast, high-voltage STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER VF IR Forward voltage Reverse current CONDITIONS IF = 6.5 A IF = 6.5 A; Tj = 125 ˚C VR = 1300 V VR = 1300 V; Tj = 125 ˚C BY329-1500, BY329-1500S TYP. 1.1 1.05 1.3 1.2 250 1 MAX. 1.45 1.35 1.6 1.5 250 1 UNIT V V µA mA BY329 1500 1500S 1500 1500S DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER trr Qs Vfr tfr Reverse recovery time Reverse recovery charge Peak forward recovery voltage Forward recovery time CONDITIONS IF = 1 A; VR ≥ 30 V; dIF/dt = 50A/µs IF = 2 A; -dIF/dt = 20 A/µs IF = 6.5A; dIF/dt = 50A/µs IF = 6.5A; dIF/dt = 50A/µs TYP. BY329 1500 1500S 0.18 1.6 17 210 0.13 0.7 23 220 MAX. 1500 0.23 2.0 30 300 1500S 0.16 0.95 40 320 µs µC V ns UNIT I F I dI F dt F trr 10% tfr VF Qs time time V VF 5V time 25% 100% fr I R Fig.1. Definition of Vfr and tfr Fig.2. Definition of trr and Qs September 1998 2 Rev 1.100 Philips Semiconductors Product specification Damper diode fast, high-voltage BY329-1500, BY329-1500S VCC IF / A 30 Tj = 125 C Tj = 25 C BY32915S Line output transformer LY 20 10 typ Cf deflection transistor D1 Cs max 0 0 0.5 1 1.5 VF / V 2 Fig.3. Basic horizontal deflection circuit. Fig.6. BY329-1500S Typical and maximum forward characteristic IF = f(VF); parameter Tj Transient thermal impedance, Zth j-mb (K/W) 100 Maximum pulse width / us V BY459X-1500 VRRM 10 1 pulse width tp time period T 10 0.1 0.01 P D tp D= tp T t 1 10 line frequency / kHz 100 0.001 1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229 10s Fig.4. Maximum allowable pulse width tp versus line frequency; Basic horizontal deflection circuit. Fig.7. Transient thermal impedance Zth = f(tp) 30 IF / A Tj = 125 C Tj = 25 C BY32915 20 10 typ max 0 0 0.5 1 1.5 VF / V 2 Fig.5. BY329-1500 Typical and maximum forward characteristic IF = f(VF); parameter Tj September 1998 3 Rev 1.100 Philips Semiconductors Product specification Damper diode fast, high-voltage MECHANICAL DATA Dimensions in mm Net Mass: 2 g BY329-1500, BY329-1500S 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 3,0 max not tinned 3,0 15,8 max 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 0,6 2,4 5,08 Fig.8. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 4 Rev 1.100 Philips Semiconductors Product specification Damper diode fast, high-voltage DEFINITIONS Data sheet status Objective specification Product specification Limiting values BY329-1500, BY329-1500S This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is n.


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