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BY399

EIC discrete Semiconductors

FAST RECOVERY RECTIFIER DIODES

www.eicsemi.com TH97/2478 TH09/2479 IATF 0060636 SGS TH07/1033 BY396 - BY399 PRV : 100 - 800 Volts Io : 3.0 Amperes ...


EIC discrete Semiconductors

BY399

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www.eicsemi.com TH97/2478 TH09/2479 IATF 0060636 SGS TH07/1033 BY396 - BY399 PRV : 100 - 800 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free FAST RECOVERY RECTIFIER DIODES DO - 201AD 0.208 (5.30) 0.188 (4.80) 1.00 (25.4) MIN. 0.374 (9.50) 0.283 (7.20) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.16 grams 0.050 (1.28) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Peak Forward Surge Current, 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 3.0 Amps. Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Stor...




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