2SB1202

Production specification PNP Epitaxial Planar Silicon Transistors FEATURES z Adoption of FBET,MBIT processes. Pb z Large current capacity and wide ASO. Lead-free z Low collector-to-emitter saturation voltage. z Fast switching speed. z Small and slim package making it easy to Make 2SB1202-used sets smaller. APPLICATIONS z High-Current Switching Applications. z Voltage regulators,relay drivers,lamp drivers, Electrical equipment. TO-251 2SB1202 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A ICP Collector Power Dissipation -6 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)008 Rev.A www.gmicroelec.com 1 Production specification PNP Epitaxial Planar Silicon Transistors 2SB1202 ELECTRICAL CHARACTERISTIC...