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C5695

Toshiba Semiconductor

2SC5695

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Displa...


Toshiba Semiconductor

C5695

File Download Download C5695 Datasheet


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TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Color TV 2SC5695 Unit: mm · High voltage: VCBO = 1500 V · Low saturation voltage: VCE (sat) = 3 V (max) · High speed: tf (2) = 0.1 µs (typ.) Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 1500 700 5 22 44 11 200 150 -55~150 Unit V V V A A W °C °C Electrical Characteristics (Tc = 25°C) JEDEC ― JEITA ― TOSHIBA 2-21F2A Weight: 9.75 g (typ.) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Storage time Switching t...




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