1N483B

AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 GENERAL PURPOSE SILICON DIODES METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE 1N483B 1N485B 1N486B VRM V RWM V (pk) 80 180 250 V (pk) 70 180 225 I O I O I FSM TA = 150°C TP = 1/120 s TA = 25°C mA mA A 200 50 200 50 200 50 2 2 2 TYPE 1N483B 1N485B 1N486B VF @100mA I R1 at V RWM I R2 at V RM I R3 at V RWM TA = 25°C TA = 25°C TA = 150°C V dc 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 nA dc 25 25 25 µA 100 100 100 µA dc 5 5 5 1N483B 1N485B 1N486B 0.085/0.125 2.16/3.18 FIGURE 1 DESIGN DATA CASE: Hermetically sealed glass case. DO-7 outline LEAD MATERIAL: Copper clad steel LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 200 °C/W maximum T...