• AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED
1...
AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 GENERAL PURPOSE SILICON DIODES METALLURGICALLY BONDED
1N483B 1N485B 1N486B
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA
0.085/0.125 2.16/3.18
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE VRM V RWM IO IO TA = 150°C mA 50 50 50 I FSM TP = 1/120 s TA = 25°C A 2 2 2
V (pk) 1N483B 1N485B 1N486B 80 180 250
V (pk) 70 180 225
mA 200 200 200
FIGURE 1
TYPE
VF @100mA
I R1 at V RWM TA = 25°C nA dc 25 25 25
I R2 at V RM TA = 25°C µA 100 100 100
I R3 at V RWM TA = 150°C µA dc 5 5 5
DESIGN DATA
CASE: Hermetically sealed glass case. DO-7 outline LEAD MATERIAL: Copper clad steel LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 200 ˚C/W maximum THERMAL IMPEDANCE: (ZOJX): 70 ˚C/W maximum POLARITY: Cathode end is banded.
V dc 1N483B 1N485B 1N486B 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0
MOUNTING POSITION: Any.
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IN483B, IN485B
1000
and
IN486B
100 IF - Forward Current - (mA)
10
15 0ºC
100 ºC
25º
C
1
0.1 .3 .4 .5 .6 .7 .8 .9 1.0 VF - Forward Voltage (V) FIGURE 2 Typical Forward Current vs Forward Voltage 1.1 1.2 1.3
1000
100
IR - Reverese Current - (µA)
10
1
150ºC
0.1
C 100º
25ºC...