1N484B

High Conductance Use Advantages 1N482B thru 1N4150 1N486B DO-35 Diodes Used as a general purpose diode in power supplies, or in clipping and steering applications. Operation at temperatures up to 200 degrees C, no derating. Can be used in harsh environments where hermeticity and low cost are important. Compatible with all major automatic pick and place mounting equipment. May be used on ceramic boards along with high temperature IR solder reflow. Features Humidity proof glass Thermally matched system No thermal fatigue No applications restrictions Sigma Bond™ plated contacts 100% guaranteed solderability Problem free assembly Six Sigma quality LL-35 MiniMELF types available Absolute Maximum Ratings Average Forward Rectified Current at TAmbient = 25 o C Maximum Non-Repetitive Surge (8.3 mSecs. 1/2 sine) Junction Temperature Range Storage Temperature Range Max. Average Power Dissipation Characteristics at T = 25 oC Peak Inverse Voltage (MIN.) (PIV) Maximum Average Rectified Current (IO) Maximum Forward Voltage Drop (VF) @ 0.1A D O -35 G lass P ack age Lead Dia. 0.018-0.022" 0.458-0.558 mm 1.0" 25.4 m m (M in.) Leng th 0.120-.200" 3.05-5.08- mm Dia. 0.06-0.09" 1.53-2.28 mm Symbol IAV IFSM Tj TS Pdiss Value 0.65 2.0 -65 to +200 -55 to +200 250 Unit Amp Amps o o C C mW Maximum Leakage Current (IR) @ PIV 25 oC 1 5 0 oC Minimum Saturation Voltage (@0.1 mA) Type 1N482B 1N483B 1N484B 1N485B 1N486B Volts 30 60 125 175 225 Amps 0.2 0.2 0.2 0.2 0.2 Volts 1.0 1.0 1.0 ...