1N486B SILICON DIODES Datasheet

1N486B Datasheet, PDF, Equivalent


Part Number

1N486B

Description

GENERAL PURPOSE SILICON DIODES

Manufacture

Compensated Deuices Incorporated

Total Page 2 Pages
Datasheet
Download 1N486B Datasheet


1N486B
• AVAILABLE IN JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2 mA/°C From 25°C to 150°C
1.0 mA/°C From 150°C to 175°C
Forward Current: 650 mA
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
1N483B
1N485B
1N486B
VRM
V RWM
V (pk)
80
180
250
V (pk)
70
180
225
I O I O I FSM
TA = 150°C TP = 1/120 s
TA = 25°C
mA mA
A
200 50
200 50
200 50
2
2
2
TYPE
1N483B
1N485B
1N486B
VF
@100mA
I R1 at V RWM I R2 at V RM I R3 at V RWM
TA = 25°C
TA = 25°C
TA = 150°C
V dc
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
nA dc
25
25
25
µA
100
100
100
µA dc
5
5
5
1N483B
1N485B
1N486B
0.085/0.125
2.16/3.18
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO-7 outline
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
200 ˚C/W maximum
THERMAL IMPEDANCE: (ZOJX): 70
˚C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com

1N486B
IN483B, IN485B and IN486B
1000
100
10
1
0.1
.3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.3
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
1000
100
10
1 150ºC
0.1
100ºC
25ºC
.01
-65ºC
.001
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
NOTE :
All temperatures shown on graphs are
junction temperatures


Features • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPO SE SILICON DIODES • METALLURGICALLY B ONDED 1N483B 1N485B 1N486B MAXIMUM RA TINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derat ing: 1.2 mA/°C From 25°C to 150°C 1. 0 mA/°C From 150°C to 175°C Forward Current: 650 mA 0.085/0.125 2.16/3.18 ELECTRICAL CHARACTERISTICS @ 25°C, unl ess otherwise specified TYPE VRM V RWM IO IO TA = 150°C mA 50 50 50 I FSM TP = 1/120 s TA = 25°C A 2 2 2 V (pk) 1N 483B 1N485B 1N486B 80 180 250 V (pk) 7 0 180 225 mA 200 200 200 FIGURE 1 TY PE VF @100mA I R1 at V RWM TA = 25°C nA dc 25 25 25 I R2 at V RM TA = 25° C µA 100 100 100 I R3 at V RWM TA = 1 50°C µA dc 5 5 5 DESIGN DATA CASE: H ermetically sealed glass case. DO-7 out line LEAD MATERIAL: Copper clad steel L EAD FINISH: Tin / Lead THERMAL RESISTAN CE: (ROJEC): 200 ˚C/W maximum THERMAL IMPEDANCE: (ZOJX): 70 ˚C/W maximum POLARITY: Cathode end is banded. V dc 1N483B 1N485B .
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