AP4232BGM-HF MOSFET Datasheet

AP4232BGM-HF Datasheet, PDF, Equivalent


Part Number

AP4232BGM-HF

Description

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 4 Pages
Datasheet
Download AP4232BGM-HF Datasheet


AP4232BGM-HF
Advanced Power
Electronics Corp.
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
Halogen Free & RoHS Compliant Product
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP4232BGM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
BVDSS
RDS(ON)
ID
D2
D2
D1
D1
SO-8
30V
22mΩ
7.6A
G2
S2
G1
S1
D1 D2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G1 G2
S1
Rating
30
+20
7.6
6
30
2
-55 to 150
-55 to 150
S2
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
200908031

AP4232BGM-HF
AP4232BGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=7A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=7A
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
ID=7A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
30 - - V
- - 22 m
- - 32 m
1 - 3V
- 15 -
S
- - 1 uA
- - +100 nA
- 6 9.6 nC
- 1.3 - nC
- 3.4 - nC
- 6 - ns
- 7.5 - ns
- 16 - ns
- 4 - ns
- 370 600 pF
- 90 - pF
- 75 - pF
- 1.6 3.2
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 17.5 -
ns
- 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Features Advanced Power Electronics Corp. ▼ Low er Gate Charge ▼ Simple Drive Require ment ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Produ ct Description Advanced Power MOSFETs f rom APEC provide the designer with the best combination of fast switching, rug gedized device design, ultra low on-res istance and cost-effectiveness. AP4232 BGM-HF Halogen-Free Product DUAL N-CHAN NEL ENHANCEMENT MODE POWER MOSFET BVDS S RDS(ON) ID D2 D2 D1 D1 SO-8 30V 22m 7.6A G2 S2 G1 S1 D1 D2 Absolute Max imum Ratings Symbol Parameter VDS VG S ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25 Drain-Source Voltage Gate-Source Vo ltage Continuous Drain Current3 Continu ous Drain Current3 Pulsed Drain Current 1 Total Power Dissipation TSTG TJ Sto rage Temperature Range Operating Juncti on Temperature Range G1 G2 S1 Rating 3 0 +20 7.6 6 30 2 -55 to 150 -55 to 150 S2 Units V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications .
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