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K7M161825A

Samsung semiconductor

512K x 36/32 & 1M x 18 Flow-Through NtRAM

K7M163625A K7M163225A K7M161825A Preliminary 512Kx36/32 & 1Mx18 Flow-Through NtRAMTM Document Title 512Kx36/32 & 1Mx18...


Samsung semiconductor

K7M161825A

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K7M163625A K7M163225A K7M161825A Preliminary 512Kx36/32 & 1Mx18 Flow-Through NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. History 0.0 1. Initial document. 0.1 1. Add JTAG Scan Order 0.2 1. Remove bin -90 2. Updated DC characteristics(ICC,ISB,ISB1,ISB2) 0.3 1. Add x32 org and industrial temperature . 2. Add 165FBGA package Draft Date Feb. 23. 2001 May. 10. 2001 Aug. 03. 2001 Aug. 30. 2001 Remark Preliminary Preliminary Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. - 1 - August 2001 Rev 0.3 K7M163625A K7M163225A K7M161825A Preliminary 512Kx36/32 & 1Mx18 Flow-Through NtRAMTM 16Mb NtR...




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