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BLF245 Dataheets PDF



Part Number BLF245
Manufacturers ASI
Logo ASI
Description RF POWER MOSFET
Datasheet BLF245 DatasheetBLF245 Datasheet (PDF)

BLF245 RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: • PG = 13 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ metalization system PACKAGE STYLE .380 4L FLG MAXIMUM RATINGS ID 6.0 A VDS 65 V VGS ±20 V PDISS 68 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +200 °C θJC 1.8 °C/W 1 = DRAIN 2 = GATE 3&4 = SOURCE CHAR.

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BLF245 RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: • PG = 13 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ metalization system PACKAGE STYLE .380 4L FLG MAXIMUM RATINGS ID 6.0 A VDS 65 V VGS ±20 V PDISS 68 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +200 °C θJC 1.8 °C/W 1 = DRAIN 2 = GATE 3&4 = SOURCE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS BVDSS ID = 10 mA IDSS VDS = 28 V VGS = 0 V IGSS VDS = 0 V VGS = ±20 V VGS(th) VDS = 10 V ID = 10 mA gfs VDS = 10 V ID = 1.5 A Ciss Coss Crss VDS = 28 V VGS = 0 V f = 1.0 MHz PG VDS = 28 V IDQ = 25 mA ηD Pout = 30 W f = 150 MHz ψ VSWR = 30:1 AT ALL PHASE ANGLES NONE MINIMUM 65 2.0 1.2 TYPICAL MAXIMUM 2.0 1.0 4.5 1.9 125 75 7.0 UNITS V mA µA V S pF 13 16 50 60 dB % NO DEGRADATION IN OUTPUT POWER A D .


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