SILICON RECTIFIER. 6A80 Datasheet

6A80 RECTIFIER. Datasheet pdf. Equivalent

Part 6A80
Description PLASTIC SILICON RECTIFIER
Feature SAMYANG ELECTRONICS 6A5--- 6A100 SAM YANG PLASTIC SILICON RECTIFIER VOLTAGE RANGE: 50 --- 1000 V.
Manufacture SAMYANG ELECTRONICS
Datasheet
Download 6A80 Datasheet




6A80
SAMYANG ELECTRONICS
6A5--- 6A100
SAM YANG
PLASTIC SILICON RECTIFIER
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned witn Freon,Alcohol,lsopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC R-6,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.072 ounces,2.04 grams
Mounting position: Any
R-6
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
6A5
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
Peak forw ard surge current
VRRM
VRMS
VDC
IF(AV)
50
35
50
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 6.0 A
IFSM
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Typical junction capacitance (Note1)
CJ
Typical thermal resistance (Note2)
R JA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
6A10 6A20 6A40 6A60 6A80 6A100 UNITS
100 200 400 600 800 1000 V
70 140 280 420 560 700 V
100 200 400 600 800 1000 V
6.0 A
400.0
1.0
10.0
100.0
120
10
- 55 ---- + 150
- 55 ---- + 150
A
V
pF
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1.



6A80
RATINGS AND CHARACTERISTIC CURVES
6A5 --- 6A100
FIG.1 -- FORWARD DERATING CURVE
8
7
6
5
4
3
2
1
0
0
S in g le P h a s e
H a lf W a v e 6 0 H Z
R e s is t iv e o r
In d u c t iv e L o a d
25 50 75
100 125 150 175
AMBIENT TEMPERATURE,
FIG.2 -- TYPICAL FORWARD CHARACTERISTICS
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
TJ=25
Pulse Width=300uS
0.01
0.6 0.8 0.9
1.0 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 --MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
400
TJ=125
300
8.3ms Single Half
Sine-Wave
200
100
0
1
2
4
8 10 20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
200
f=1MHz
TJ=25
100
10
.1 .2 .4 1.0 2 4
10 20 40 100
REVERSE VOLTAGE, VOLTS
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