Silicon Rectifiers. 6A8S-G Datasheet

6A8S-G Rectifiers. Datasheet pdf. Equivalent

Part 6A8S-G
Description General Purpose Silicon Rectifiers
Feature General Purpose Silicon Rectifiers 6A05S-G Thru. 6A10S-G Reverse Voltage: 50 to 1000 V Forward Curre.
Manufacture Comchip
Datasheet
Download 6A8S-G Datasheet




6A8S-G
General Purpose Silicon Rectifiers
6A05S-G Thru. 6A10S-G
Reverse Voltage: 50 to 1000 V
Forward Current: 6.0 A
RoHS Device
Features
-Diffused junction.
-Low forward voltage drop.
-Low reverse leakage current.
-High current capability.
Mechanical data
-Epoxy: UL 94V-0 rate flame retardant.
-Case: JEDEC DO-27 molded plastic.
-Polarity: Color band denotes cathode.
-Weight: 0.04ounce, 1.1 grams.
-Mounting position: Any.
DO-27
1.0(25.4) min.
0.052(1.30)
0.048(1.20) DIA.
0.375(9.50)
0.285(7.20)
1.0(25.4) min.
0.220(5.60)
0.197(5.00)
DIA.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Symbol 6A05S-G 6A1S-G 6A2S-G 6A4S-G 6A6S-G 6A8S-G 6A10S-G Unit
Maximum recurrent peak reverse voltage
VRRM 50 100
Maximum RMS voltage
VRMS
35
70
Maximum DC blocking voltage
VDC 50 100
Maximum average forward rectified current
@TA=60°C
I(AV)
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum forward voltage at 6.0A DC
VF
Max. DC reverse current
at rated DC blocking voltage
TJ=25°C
TJ=100°C
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
IR
IR
CJ
RθJL
Operating temperature range
TJ
Storage temperature range
TSTG
NOTES:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to lead / terminal at a distance 1mm from case.
200 400 600
140 280 420
200 400 600
6.0
240
1.0
10
100
80
2.0
-55 ~ +150
-55 ~ +175
800 1000 V
560 700 V
800 1000 V
A
A
V
μA
pF
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BG018
Comchip Technology CO., LTD.
REV: A
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6A8S-G
General Purpose Silicon Rectifiers
RATING AND CHARACTERISTIC CURVES (6A05S-G Thru. 6A10S-G)
Fig.1 - Forward Current Derating Curve
8
6
4
2
Single phase half wave, 60Hz
Resistive or inductive load
0
25 50 75 100 125
150
Ambient Temperature, (°C)
175
Fig.3 - Typical Junction Capacitance
1000
Fig.2 - Max. Non-repetitive Surge Current
400
300
200
100
Pulse width 8.3mS single half sine-
wave (JEDEC Method)
0
1 10 20
Number of Cycles at 60Hz
100
Fig.4 - Typical Forward Characteristics
100
100
TJ=25°C
f=1MHz
1
1 10
Reverse Voltage, (V)
100
10
TJ=25°C
1.0
Pulse width=300μs
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage, (V)
Company reserves the right to improve product design , functions and reliability without notice. REV: A
QW-BG018
Comchip Technology CO., LTD.
Page 2







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