Gain Block. WJA1505 Datasheet

WJA1505 Block. Datasheet pdf. Equivalent

Part WJA1505
Description +5V Active-Bias InGaP HBT Gain Block
Feature WJA1505 +5V Active-Bias InGaP HBT Gain Block Product Features Product Description Functional Diag.
Manufacture TriQuint Semiconductor
Datasheet
Download WJA1505 Datasheet




WJA1505
WJA1505
+5V Active-Bias InGaP HBT Gain Block
Product Features
Product Description
Functional Diagram
Cascadable gain block
50 – 1000 MHz
19 dB Gain
+19 dBm P1dB
+37 dBm OIP3
+51dBm OIP2
Operates from +5V @ 65mA
Robust 1000V ESD, Class 1C
RoHS-compliant SOT-89 package
Applications
IF Amplifier
VHF/UHF Transmission
Wireless Infrastructure
General Purpose
CATV / FTTH
The WJA1505 is a cascadable gain block that offers high
linearity in a low-cost surface-mount package. At 200
MHz, the WJA1505 typically provides 19 dB gain, +37
dBm OIP3, and +19 dBm P1dB. The device is housed in a
RoHS-compliant SOT-89 industry-standard SMT package
using a NiPdAu plating to eliminate the possibility of tin
whiskering.
The WJA1505 consists of Darlington pair amplifiers using
a high reliability InGaP/GaAs HBT process technology.
The MMIC amplifier is internally matched to 50Ω and only
requires DC-blocking capacitors and a bias inductor for
operation. An internal active bias is designed to enable
stable performance over temperature. A dropping bias
resistor is not required allowing the device to be biased
directly from +5V supply voltage.
The amplifier is targeted for high performance IF applications
in existing and next generation wireless technologies. The
WJA1505 is ideal for general purpose applications such as LO
buffering, IF amplification and pre-driver stages within the 50
to 1000 MHz frequency range.
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Device Voltage
Device Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
Min
50
17.7
+33
55
Typ
200
19.3
19
20
+19.3
+36.6
+51.0
4.7
5
65
Max
1000
20.7
75
1. Test conditions: 25 ºC, Supply Voltage = +5 V, 50 System. S-parameters and 3OIP measured at
device pins. All other specifications measured on evaluation board.
2. 3OIP measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance (3)
Parameter Units
Frequency
MHz
S21 dB
S11 dB
S22 dB
Output P1dB
Output IP3 (2)
dBm
dBm
Output IP2
dBm
Noise Figure
dB
Typical
70 170
19.4 19.2
-15 -18
-22 -22
+19.1 +19.2
+35.8 +36.7
+50.7 +51.4
4.6 4.7
240
19.0
-19
-20
+19.2
+36.9
+51.0
4.7
500
18.5
-18
-15
+18.9
+37.7
+54.1
4.9
900
17.3
-14
-10
+17.7
+33.6
+52.9
5.5
3. Listed typical performance parameters measured on evaluation board
Not Recommended For New
Designs
Recommended replacement parts:
TQP3M9008
Absolute Maximum Rating
Parameter
Storage Temperature
Supply Voltage
Input Power
θjc (junction to paddle)
Maximum Junction Temperature
Rating
-55 to +150 °C
+6.5 V
+24 dBm
83.8 °C / W
150 °C
Ordering Information
Part No.
WJA1505
Description
+5V Active Bias InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Package)
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 1 of 4 June 2011



WJA1505
WJA1505
+5V Active-Bias InGaP HBT Gain Block
Typical Evaluation Board RF Performance Plots
Supply Bias = +5V, Icc = 65 mA
1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Icc = 65 mA typical, 50 System.
2. 3OIP measured with two tones at an output power of 6 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule.
20
18
16
14
12
10
0
20
18
16
14
12
10
10
65
60
55
50
45
40
35
0
Gainvs. Frequency
-40C +25C +85C
500 1000
Frequency(MHz)
Gainvs. Pout
Freq=200 MHz
1500
12 14 16
Pout (dBm)
OIP2vs. Frequency
Pout = 2 dBm/tone
18
0
-5
-10
-15
-20
-25
-30
2000 0
45
40
35
30
25
20 0
20
Return Loss
T=25°C
10
9
8
7
6
5
4
S11 S22
200 400 600
Frequency (MHz)
3
2
800 1000 0
OIP3 vs. Frequency
Pout =6 dBm/tone
50
Noise Figure vs. Frequency
-40C +25C +85C
200 400 600
Frequency (MHz)
800
OIP3 vs Vcc
1000
45
40
35
-40C +25C +85C
200 400 600
Frequency (MHz)
P1dBvs. Frequency
800
30
25
1000 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2
Vcc (V)
P1dBvs Vcc
20
18 18
16 16
14 14
200 400 600
Frequency (MHz)
75
12
10
800 1000 0
Icc vs. Temperature
Vcc= +5V
-40C +25C +85C
200 400 600
Frequency (MHz)
800
120
12
10
1000 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2
Vcc (V)
Icc vs. Vcc
70
65
60
55
-50
-25
0 25 50
Temperature (°C)
100
80
60
40
20
75 100
4.0
-40C +25C +85C
4.5 5.0
Vcc (V)
5.5
6.0
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 4 June 2011







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