Gain Block. WJA1500 Datasheet

WJA1500 Block. Datasheet pdf. Equivalent

Part WJA1500
Description +5 V Active-Bias InGaP HBT Gain Block
Feature WJA1500 +5 V Active-Bias InGaP HBT Gain Block Applications  IF Amplifier  VHF/UHF Transmission  .
Manufacture TriQuint Semiconductor
Datasheet
Download WJA1500 Datasheet




WJA1500
WJA1500
+5 V Active-Bias InGaP HBT Gain Block
Applications
IF Amplifier
VHF/UHF Transmission
Wireless Infrastructure
CATV / SATV / MoCA
General Purpose Wireless
Product Features
50 Ohm Cascadable Gain Block
50-1000 MHz
19.5 dB Gain at 200 MHz
+20.5 dBm P1dB at 200 MHz
+43.5 dBm Output IP3 at 200 MHz
+60 dBm Output IP2 at 200 MHz
Single +5 V Supply, 95 mA Current
Robust 1000V ESD, Class 1C
SOT-89 Package
General Description
The WJA1500 is a cascadable gain block that offers
high linearity in a low-cost surface-mount package. At
200 MHz, the WJA1500 typically provides 19.5 dB gain,
+43.5 dBm OIP3, and +20.5 dBm P1dB. The device is
housed in a RoHS-compliant SOT-89 industry-standard
SMT package using a NiPdAu plating to eliminate the
possibility of tin whiskering.
The WJA1500 consists of Darlington pair amplifiers
using a high reliability InGaP/GaAs HBT process
technology. The MMIC amplifier is internally matched
to 50 Ω and only requires DC-blocking capacitors and a
bias inductor for operation. An internal active bias is
designed to enable stable performance over temperature.
A dropping bias resistor is not required allowing the
device to be biased directly from +5 V supply voltage.
The amplifier is targeted for high performance IF
applications in existing and next generation wireless
technologies. The WJA1500 is ideal for general purpose
applications such as LO buffering, IF amplification and
pre-driver stages within the 50 to 1000 MHz frequency
range.
SOT-89 Package
Functional Block Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Pin Configuration
Pin #
1
3
2, 4
Symbol
RF IN
RF OUT
GND
Ordering Information
Part No.
Description
WJA1500
InGaP HBT Gain Block
WJA1500-PCB
50-1000 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
Data Sheet: Rev A 2/20/12
© 2012 TriQuint Semiconductor, Inc.
- 1 of 8 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®



WJA1500
WJA1500
+5 V Active-Bias InGaP HBT Gain Block
Specifications
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power,CW,50 Ω,T=25ºC
Supply Voltage
Rating
-55 to 150 °C
+24 dBm
+6.5 V
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Vcc
Tcase
Tj (for>106 hours MTTF)
Min
+4.75
-40
Typ
+5
Max
+5.25
+85
+150
Units
V
°C
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: Vsupply=+5 V, TCASE = +25°C, 50 Ω system.
Parameter
Conditions Min
Operational Frequency Range
50
Test Frequency
Gain 17.8
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
See Note 1.
+39
Output IP2
Noise Figure
Device Voltage, Vcc
Device Current, Icc
Thermal Resistance (jnc to case) θjc
79
Typical
200
19.4
17
21
+20.5
+43.7
+59.8
5.0
5.0
95
Max
1000
20.8
99
78
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
°C/W
Notes:
1. OIP3 is measured with two tones at an output power of +8 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product
is used to calculate the OIP3 using 2:1 rule. 2:1 rule gives relative value with respect to fundamental tone.
Data Sheet: Rev A 2/20/12
© 2012 TriQuint Semiconductor, Inc.
- 2 of 8 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®







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