HBT Amplifier. AH322-S8G Datasheet

AH322-S8G Amplifier. Datasheet pdf. Equivalent

Part AH322-S8G
Description High Linearity InGaP HBT Amplifier
Feature Applications  Repeaters  Base Station Transceivers  High Power Amplifiers  Mobile Infrastructure.
Manufacture TriQuint Semiconductor
Datasheet
Download AH322-S8G Datasheet




AH322-S8G
Applications
Repeaters
Base Station Transceivers
High Power Amplifiers
Mobile Infrastructure
LTE / WCDMA / CDMA / WiMAX
Product Features
400-2700 MHz
13.7 dB Gain at 2140 MHz
+33 dBm P1dB
+50 dBm Output IP3
500 mA Quiescent Current
+5 V Single Supply
MTTF > 100 Years
Lead-free/RoHS-compliant SOIC-8 Package
AH322-S8G
2 Watt, High Linearity InGaP HBT Amplifier
SOIC-8 Package
Functional Block Diagram
Vbias 1
N/C 2
RF_In 3
N/C 4
Pin 1 Reference Mark
8 Iref
7 RF_Out
6 RF_Out
5 N/C
Backside Paddle - RF/DC GND
General Description
The AH322 is a high dynamic range driver amplifier in a
low-cost surface-mount package. The InGaP/GaAs HBT
is able to achieve high performance for various
narrowband-tuned application circuits with up to +50
dBm OIP3 and +33 dBm of compressed 1dB power.
The integrated active bias circuitry in the devices
enables excellent stable linearity performance over
temperature. It is housed in a lead-free/RoHS-compliant
SOIC-8 package. All devices are 100% RF and DC
tested.
The AH322 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH322 is ideal for the final stage
of small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a
wide variety of other applications within the 400 to 2700
MHz frequency band.
Pin Configuration
Pin No.
1
2, 4, 5
3
6, 7
8
Backside Paddle
Label
Vbias
N/C
RF_in
RF_Out
Iref
RF/DC GND
Not Recommended for
New Designs
Recommended Replacement Part:
TQP7M9104
Ordering Information
Part No.
Description
AH322-S8G
High Linearity InGaP HBT Amplifier
Standard tape / reel size = 1000 pieces on a 7” reel
Datasheet: Rev D 02-12-16
© 2016 TriQuint Semiconductor, Inc
- 1 of 20 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com



AH322-S8G
AH322-S8G
2 Watt, High Linearity InGaP HBT Amplifier
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
-65 to 150°C
RF Input Power, CW, 50Ω, T=25°C Input P10dB
Device Voltage (VCC)
+8 V
Device Current
1400 mA
Device Power
8W
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter
Device Voltage (VCC)
Case Temperature
Min Typ Max Units
4.5 5.0 5.25 V
40 +85 °C
Tj for >106 hours MTTF
+200 °C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VCC=+5 V, ICQ=500 mA, Temp= +25°C, tuned application circuit
Parameter
Conditions
Min Typ Max
Operational Frequency Range
400 2700
Test Frequency
2140
Gain
13.7
Input R.L.
10.2
Output R.L.
14
Output P1dB
Output IP3
Pout = +24 dBm/tone, Δf=1 MHz
+31.4
+45
+32.6
+50.0
WCDMA Channel Power (1) ACLR= -50 dBc
+25.3
Noise Figure
Quiescent Current, Icq (2)
7.7
435 500 600
Iref 30
Thermal Resistance, ƟJC
Junction to backside paddle
18.6
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Probability.
2. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6 and 7.
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
°C
Performance Summary Table
Test conditions unless otherwise noted: VCC = +5 V, ICQ = 500 mA, TLEAD = 25°C, frequency specific application circuits
Parameter
Typical Value
Frequency
750 940 1840 1960 2140 2655
Gain
19.2 19.3 14.6 14.1 13.7 12.6
Input Return Loss
17
13
19
12.6
10.2
20
Output Return Loss
10.3
7.5
11.3
10.9
14
9.3
Output P1dB
+32.5 +32.8 +33.1 +33.2 +32.6 +31.9
Output IP3 (Pout= +17 dBm/Tone, Δf = 1 MHz)
+46 +47.3 +49.5 +48.5 +50.0 +45.1
WCDMA Channel Power (ACPR = −45 dBc) +23.1 +23.5 +24.1 +23.7 +23.4 +22.6
Notes:
1. For 750 MHz, 940 MHz, 1840 MHz, 1960 MHz, and 2655 MHz; Pout/tone=+21 dBm.
2. For 2140 MHz; Pout/tone=+24 dBm.
Units
MHz
dB
dB
dB
dB
dBm
dBm
Datasheet: Rev D 02-12-16
© 2016 TriQuint Semiconductor, Inc
- 2 of 20 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com







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