Gain Block. ECG004 Datasheet

ECG004 Block. Datasheet pdf. Equivalent

Part ECG004
Description InGaP HBT Gain Block
Feature ECG004 InGaP HBT Gain Block Product Features • DC – 6 GHz • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 a.
Manufacture TriQuint Semiconductor
Datasheet
Download ECG004 Datasheet




ECG004
ECG004
InGaP HBT Gain Block
Product Features
DC – 6 GHz
+13.5 dBm P1dB at 1 GHz
+28 dBm OIP3 at 1 GHz
16.2 dB Gain at 1 GHz
3.2 dB Noise Figure
Available in Lead-free / green
SOT-89 Package Style
Internally matched to 50
Applications
Mobile Infrastructure
CATV / FTTX
W-LAN / ISM
RFID
WiMAX / WiBro
Product Description
The ECG004B is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 1000 MHz, the ECG004B typically provides
16 dB of gain, +28 dBm Output IP3, and +13.5 dBm P1dB.
Functional Diagram
GND
4
The ECG004B consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation. The device is
ideal for wireless applications and is available in a low-
cost, surface-mountable lead-free/green/RoHS-compliant
SOT-89 package. All devices are 100% RF and DC tested.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the ECG004B will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and mobile wireless.
1
RF IN
2
GND
3
RF OUT
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Output P1dB
Output IP3 (3)
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
Device Voltage
Device Current
Units
MHz
MHz
dB
dBm
dBm
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
Min
DC
13.5
10.5
3.1
Typ
1000
16.2
+13.5
+28
2000
15.9
19
15
+13
+27
3.2
3.4
35
Max
6000
3.7
1. Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +5 V, Rbias = 45.3 , 50 System.
2. 3OIP measured with two tones at an output power of –1 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance (1)
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
16.5
-31
-28
+13.6
+28
3.3
Typical
900 1900
16.2 15.5
-28 -19
-21 -21
+13.5 +13
+28 +27
3.2 3.3
2140
15.2
-18
-14
+13
+27
3.3
Not Recommended for
New Designs
Recommended Replacement
Part: TQP369180
Absolute Maximum Rating
Parameter
Storage Temperature
Device Current
RF Input Power (continuous)
Junction Temperature
Thermal Resistance
Rating
-55 to +150 °C
150 mA
+12 dBm
+160 °C
167 °C/W
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
Ordering Information
Part No.
ECG004B-G
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 package)
Standard T/R size = 1000 pieces on a 7” reel.
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 1 of 4 May 2012



ECG004
ECG004
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 45.3 , Icc = 35 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
16.8
-18
-16.7
+13.4
+28
3.3
500
16.5
-31
-28
+13.5
+28
3.3
900
16.3
-28
-21
+13.5
+28
3.3
1900
15.5
-19
-15
+12.9
+27
2.9
2140
15.2
-18
-14
+12.9
+27
3.0
2400
14.9
-17
-12.5
+12.8
+27
3.4
3500
13.1
-12.6
-9
+11.7
+24
3.5
5800
10.2
-5
-4
+5
1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = +3.9 V, Rbias = 45.3 , Icc = 35 mA typical, 50 System.
2. 3OIP measured with two tones at an output power of -1 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
18
16
14
12
10
8
500
30
Gain vs. Frequency
+25C -40C +85C
1000 1500 2000
Frequency (MHz)
OIP3 vs. Frequency
2500
0
-5
-10
-15
-20
-25
-30
-35
-40
3000 0
S11, S22 vs. Frequency
S22
S11
1234
Frequency (GHz)
5
Noise Figure vs. Frequency
4
Vde vs. Icc
120
100
80
+25C
60
40
20
0
6 0.0
1.0 2.0
Vde (V)
P1dB vs. Frequency
16
25 3.5 14
3.0
4.0
20 3 12
15
10
500
+25C -40C +85C
1000 1500 2000
Frequency (MHz)
2500
3000
2.5
2
500
1000 1500
Frequency (MHz)
10
8 +25C -40C +85C
2000 500 1000 1500 2000 2500 3000
Frequency (MHz)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 4 May 2012







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