Gain Block. ECG001F-G Datasheet

ECG001F-G Block. Datasheet pdf. Equivalent

Part ECG001F-G
Description InGaP HBT Gain Block
Feature Applications • Wireless Infrastructure • CATV / SATV / MoCA • Point to Point • Defense & Aerospace •.
Manufacture TriQuint Semiconductor
Datasheet
Download ECG001F-G Datasheet




ECG001F-G
Applications
Wireless Infrastructure
CATV / SATV / MoCA
Point to Point
Defense & Aerospace
Test & Measurement Equipment
General Purpose Wireless
Product Features
DC6GHz
22dB Gain at 1GHz
+12.5dBm P1dB at1GHz
+25dBm OIP3 at 1GHz
3.4dB Noise Figure
Internally Matched to 50 Ω
Lead-free/green/RoHS-Compliant SOT-363 Package
ECG001F-G
InGaP HBT Gain Block
ECG001F-G
6 Pin SOT-363 Package
Functional Block Diagram
General Description
The ECG001F-G is a general-purpose buffer amplifier
that offers high dynamic range in a low-cost surface-
mount package. At 1000MHz, the ECG001F-G typically
provides 22dB of gain, +25dBm Output IP3, and
+12.5dBm P1dB.
Pin Configuration
Pin No.
3
6
1, 2, 4, 5
Label
RF IN
RF OUT
GND
The ECG001F-G consists of a Darlington-pair amplifier
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The device is ideal for wireless applications and is
available in a low-cost, surface-mountable lead-
free/green/RoHS-compliant SOT-363 package. All
devices are 100% RF and DC tested.
This broadband MMIC amplifier can be directly applied
to various current and next generation wireless
technologies. In addition, the ECG001F-G will satisfy
general amplification requirements in the DC to 6GHz
frequency range such as CATV and mobile wireless.
Ordering Information
Part No.
Description
ECG001F-G
InGaP/GaAs HBT Gain Block
Standard T/R size = 3000 pieces on a 7” reel
Datasheet: Rev. A 12-05-14
© 2014 TriQuint
- 1 of 6 -
Disclaimer: Subject to change without notice
www.triquint.com



ECG001F-G
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
55 to 150 °C
RF Input Power, CW, 50Ω, T=25 °C +12dBm
Device Current (ICC)
150 mA
Operation of this device outside the parameter ranges
given above may cause permanent damage.
ECG001F-G
InGaP HBT Gain Block
Recommended Operating Conditions
Parameter
Min Typ Max Units
TCASE
Tj for >106 hours MTTF
−40
+85
+160
°C
°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VSUPPLY = +5V, TCASE = +25 °C, RBIAS = 51 Ω, 50 Ω system
Parameter
Conditions
Min Typ
Operational Frequency Range
DC
Gain
Output P1dB
Output IP3 (1)
Freq.=1000 MHz
OIP3 Pout= −1 dBm / tone, Δf= 1 MHz
22.2
+12.5
+25
Gain
19.2 20.7
Input Return Loss
35
Output Return Loss
Freq.=2000 MHz
18
Output P1dB
+12.5
Noise Figure
3.4
Device Voltage
+3.0 +3.4
Device Current  
30
Thermal Resistance, RTH
270 
Max
6000
21.8
+3.8
Units
MHz
dB
dBm
dBm
dB
dB
dB
dBm
dB
V
mA
°C / W
Typical RF Performance (1)
Test conditions unless otherwise noted: VSUPPLY = +5 V, Icc = 30 mA (typ.), RBIAS=51 Ω, Temp. =+25 °C, 50 Ω System
Parameter
Typical
Units
Frequency
100 500 900 1900 2140 2400 3500 5800 MHz
Gain
22.8 22.6 22.4 20.9 20.6 20.2 18.6 15.5
dB
Input Return Loss 48 46 42 35 29 28 22 14 dB
Output Return Loss
34
29
24
18
17
16
13
8
dB
Output P1dB
+11.6 +11.6 +12.6 +12.6 +12.6 +12.8 +12.2
+11
dBm
Output IP3 (2)
+23.6 +23.5 +24.8 +26 +25.6 +25.4 +23
dBm
Noise Figure
3.4 3.4 3.4 3.4 3.4 3.4
dB
Notes:
1. Gain and return loss values presented above, and in the plots of the following section, are measured at the device level.
Application specific performance values will differ in accordance with external components selected for the desired frequency
band of operation. P1dB, OIP3 and NF data is measured using the application circuit shown on page 4.
2. Pout= 1 dBm/tone, 1MHz tone spacing.
Datasheet: Rev. A 12-05-14
© 2014 TriQuint
- 2 of 6 -
Disclaimer: Subject to change without notice
www.triquint.com







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