Gain Block. AG503-89 Datasheet

AG503-89 Block. Datasheet pdf. Equivalent

Part AG503-89
Description InGaP HBT Gain Block
Feature AG503-89 InGaP HBT Gain Block Product Features • DC – 4000 MHz • +15.5 dBm P1dB at 900 MHz • +29 dB.
Manufacture TriQuint Semiconductor
Datasheet
Download AG503-89 Datasheet




AG503-89
AG503-89
InGaP HBT Gain Block
Product Features
DC – 4000 MHz
+15.5 dBm P1dB at 900 MHz
+29 dBm OIP3 at 900 MHz
21.5 dB Gain at 900 MHz
Single Voltage Supply
Lead-free / RoHS-compliant /
Green SOT-89package
Internally matched to 50 Ω
Applications
Mobile Infrastructure
CATV / FTTX
W-LAN / ISM
RFID
WiMAX / WiBro
Product Description
Functional Diagram
The AG503-89 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG503-89 typically provides
21.5 dB of gain, +29 dBm OIP3, and +15.5 dBm P1dB.
The device combines dependable performance with
consistent quality to maintain MTTF values exceeding
1000 years at mounting temperatures of +85 °C and is
housed in a lead-free/green/RoHS-compliant SOT-89
industry-standard SMT package.
GND
4
1
RF IN
2
GND
3
RF OUT
The AG503-89 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation.
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG503-89 will work for other various applications
within the DC to 4 GHz frequency range such as CATV
and WiMAX.
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Test Frequency
Gain
Output P1dB
Output IP3 (2)
Device Voltage
Device Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
V
mA
Min
DC
18.1
Typ
900
21.3
15
17
+15.6
+29
+37
3.1
1900
19.1
+14.4
+27.4
5.0
45
Max
4000
20.1
1. Test conditions: 25 ºC, Supply Voltage = +6 V, Rbias = 22.1 Ω, 50 Ω System.
2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance (1)
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3 (2)
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
22.0
-18
-24
+15.6
+29.4
3.0
Typical
900 1900
21.3 19.1
-15 -15
-17 -10.6
+15.6 +14.4
+29.0 +27.4
3.1 3.3
2140
18.7
-17
-10.4
+14.2
+27.2
3.3
Absolute Maximum Rating
Parameter
Storage Temperature
DC Voltage
RF Input Power (continuous)
Junction Temperature
Thermal Resistance, Rth
Rating
-55 to +150 °C
+5.8 V
+10 dBm
+177 °C
232 °C / W
Ordering Information
Part No.
AG503-89G
AG503-89PCB
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Package)
700 – 2400 MHz Fully Assembled Eval. Board
Operation of this device above any of these parameters may cause permanent damage.
Standard T/R size = 3000 pieces on a 13” reel.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 January 2008



AG503-89
AG503-89
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +6 V, Rbias = 22.1 Ω, Icc = 45 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
22.3
-26
-18
+15.9
+29.4
3.0
500
22.0
-18
-24
+15.6
+29.4
3.0
900
21.3
-15
-17
+15.6
+29.0
3.1
1900
19.1
-15
-10.6
+14.4
+27.4
3.3
2140
18.7
-17
-10.4
+14.2
+27.2
3.3
2400
18.2
-22
-10.7
+14.0
+26.8
3.4
3500
16.6
-27
-16
+11.3
5800
12.8
-16
-8.2
1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, Device Voltage = 6.0 V, Rbias = 22.1 Ω, Icc = 45 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
22
20
18
16
14
-40 C +25 C +85 C
12
0123
Frequency (GHz)
Output IP3vs. Frequency
35
Return Loss
0
-10
-20
I-V Curve
80
60
Optimal operating point
40
-30
-40
40
45
S11 S22
1234
Frequency (GHz)
Output IP2vs. Frequency
5
6
20
0
3.0 3.4 3.8 4.2 4.6 5.0 5.4
Device Voltage (V)
Noise Figurevs. Frequency
5
30
25
20
15
0
20
-40 C
+25 C
+85 C
0.5 1 1.5 2
Frequency (GHz)
P1dBvs. Frequency
2.5
40 4
3
35
2
30
-40 C
+25 C
+85 C
1
25
30
0
200 400 600 800 1000
0
Frequency (MHz)
Output Power / Gain vs. Input Power
20
frequency = 900 MHz
20 18
-40 C
+25 C
+85 C
0.5 1 1.5 2 2.5 3
Frequency (GHz)
Output Power / Gain vs. Input Power
frequency = 2000 MHz
20
15
18
Gain
16 16
Gain
16
16 12 14 12
10
14 8 12 8
5
-40 C
+25 C
+85 C
12 Output Power
4 10 Output Power
4
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
10
-12
-8 -4 0 4
Input Power (dBm)
0
8
8
-12 -8
-4
0
4
Input Power (dBm)
0
8
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 2 of 5 January 2008







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