Gain Block. AG303-63 Datasheet

AG303-63 Block. Datasheet pdf. Equivalent

Part AG303-63
Description InGaP HBT Gain Block
Feature AG303-63 InGaP HBT Gain Block Product Features • DC – 6000 MHz • 20.5 dB Gain @ 900 MHz • +14 dBm P.
Manufacture TriQuint Semiconductor
Datasheet
Download AG303-63 Datasheet



AG303-63
AG303-63
InGaP HBT Gain Block
Product Features
DC 6000 MHz
20.5 dB Gain @ 900 MHz
+14 dBm P1dB @ 900 MHz
+26 dBm OIP3 @ 900 MHz
Single Voltage Supply
Internally matched to 50
Robust 1000V ESD, Class 1C
Lead-free/green/RoHS-compliant
SOT-363 package
Applications
Mobile Infrastructure
CATV / FTTX
WLAN / ISM
RFID
WiMAX / WiBro
Product Description
Functional Diagram
The AG303-63 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG303-63 typically provides
20.5 dB gain, +26 dBm OIP3, and +14 dBm P1dB. The
device combines dependable performance with consistent
quality to maintain MTTF values exceeding 1000 years at
mounting temperatures of +85 C and is housed in a lead
free/green/RoHS-compliant SOT-363 industry standard
SMT package.
The AG303-63 consists of a Darlington-pair amplifier
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
GND 1
6 RF OUT
GND 2
5 GND
RF IN 3
4 GND
Function
Input
Output/Bias
Ground
Pin No.
3
6
1, 2, 4, 5
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG303-63 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and WiMAX.
Specifications (1)
Parameter
Operational Bandwidth
Operational Temperature
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Test Frequency
Gain
Output P1dB
Output IP3 (2)
Device Voltage
Device Current
Units
MHz
oC
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
V
mA
Min
DC
-40
17.3
Typ
25
900
20.5
21
24
+14
+25.8
+34
3.2
1900
18.3
+12.6
+25.3
4.23
35
Max
6000
+85
19.3
1. Test conditions:. T = 25 ºC, Supply Voltage = +5 V, Rbias = 22.1 , 50 System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance (1)
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
21.1
-20
-25
+14.0
+26.1
3.1
Typical
900 1900
20.5 18.3
-21 -20
-24 -19
+14.0 +12.6
+25.8 +25.3
3.2 3.4
2140
17.7
-20
-18
+12.2
+24.9
3.4
Absolute Maximum Rating
Parameter
Storage Temperature
DC Voltage
RF Input Power (continuous)
Thermal Resistance, Rth
For 106 hours MTTF
Junction Temperature
Rating
-55 to +125 C
+4.5 V
+10 dBm
350C/W
+177C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
AG303-63G
AG303-63PCB
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-363 Package)
700 2400 MHz Fully Assembled Eval. Board
Standard tape / reel size = 3000 pieces on a 7” reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 1 of 5 August 2009



AG303-63
AG303-63
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 22.1 , Icc = 35 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
DB
100
21.4
-23
-20
+14.0
+26.3
3.1
500
21.1
-20
-25
+14.0
+26.1
3.1
900
20.5
-21
-24
+14.0
+25.8
3.2
1900
18.3
-20
-19
+12.6
+25.3
3.4
2140
17.7
-20
-18
+12.2
+24.9
3.4
2400
17.1
-20
17
+12.1
+24.2
3.5
3500
15.1
-21
-16
+9.8
5800
11.4
-20
-11
1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 , Icc = 35 mA typical, 50 System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
22
20
18
16
14
12
0
30
-40 C +25 C +85 C
123
Frequency (GHz)
Output IP3 vs. Frequency
0
-10
-20
-30
-40
40
40
Return Loss
S11
1234
Frequency (GHz)
Output IP2 vs. Frequency
S22
56
60
50
40
30
20
10
0
3.0
5
I-V Curve
Optimal operating point
3.5 4.0
Device Voltage (V)
Noise Figure vs. Frequency
4.5
25 35
20 30
15
10
0
20
-40 C +25 C +85 C
0.5 1 1.5 2 2.5
Frequency (GHz)
P1dB vs. Frequency
25
20
30
20
4
3
2
-40C +25C +85C
1
-40 C +25 C +85 C
0
200 400 600 800 1000
0 0.5 1 1.5 2 2.5 3
Frequency (MHz)
Frequency (GHz)
Output Power / Gain vs. Input Power
Output Power / Gain vs. Input Power
frequency = 900 MHz
20 18
frequency = 2000 MHz
16
15
10
5
-40 C
+25 C
+85 C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
18
Gain
16
14
12
10
-20
Output Power
-16 -12 -8 -4
Input Power (dBm)
0
16
12
8
4
0
4
16 Gain
14
12
10
8
-20
Output Power
-16 -12 -8 -4
Input Power (dBm)
0
12
8
4
0
-4
4
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 5 August 2009







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