Gain Block. AG302-63 Datasheet

AG302-63 Block. Datasheet pdf. Equivalent

Part AG302-63
Description InGaP HBT Gain Block
Feature AG302-63 InGaP HBT Gain Block Product Features Product Description Functional Diagram • DC – 600.
Manufacture TriQuint Semiconductor
Datasheet
Download AG302-63 Datasheet




AG302-63
AG302-63
InGaP HBT Gain Block
Product Features
Product Description
Functional Diagram
DC 6000 MHz
15.5 dB Gain @ 900 MHz
+13.5 dBm P1dB @ 900 MHz
+26.5 dBm OIP3 @ 900 MHz
Single Voltage Supply
Internally matched to 50
Robust 1000V ESD, Class 1C
Lead-free/green/RoHS-compliant
SOT-363 package
Applications
Mobile Infrastructure
CATV / FTTX
WLAN / ISM
RFID
WiMAX / WiBro
The AG302-63 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG302-63 typically provides
15.5 dB gain, +26.5 dBm OIP3, and +13.5 dBm P1dB. The
device combines dependable performance with consistent
quality to maintain MTTF values exceeding 1000 years at
mounting temperatures of +85 C and is housed in a lead-
free/green/RoHS-compliant SOT-363 industry standard
SMT package.
The AG302-63 consists of a Darlington-pair amplifier
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG302-63 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and WiMAX.
GND 1
6 RF OUT
GND 2
5 GND
RF IN 3
4 GND
Function
Input
Output/Bias
Ground
Pin No.
3
6
1, 2, 4, 5
Specifications (1)
Parameter
Units Min Typ Max
Operational Bandwidth
Operational Temperature
MHz
oC
DC
-40
6000
25 +85
Test Frequency
MHz
900
Gain dB 15.6
Input Return Loss
dB
18
Output Return Loss
dB
18
Output P1dB
Output IP3 (2)
dBm +13.4
dBm +26.4
Output IP2
dBm +37
Noise Figure
dB 3.4
Test Frequency
MHz
1900
Gain dB 13.5 14.5 15.5
Output P1dB
Output IP3 (2)
dBm +12.2
dBm +24.8
Device Voltage
V
4.23
Device Current
mA
35
1. Test conditions: . T = 25 ºC, Supply Voltage = +5 V, Rbias = 22.1 , 50 System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
15.9
-18
-20
+13.2
+26.6
3.3
Typical
900 1900
15.6 14.5
-18 -18
-18 -18
+13.4 +12.2
+26.4 +24.8
3.4 3.6
2140
14.2
-18
-15
+11.7
+24.3
3.6
Absolute Maximum Rating
Parameter
Storage Temperature
DC Voltage
RF Input Power (continuous)
Thermal Resistance, Rth
For 106 hours MTTF
Junction Temperature
Rating
-55 to +125 C
+4.5 V
+10 dBm
325C/W
+177C
Ordering Information
Part No.
AG302-63G
AG302-63PCB
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-363 Package)
700 2400 MHz Fully Assembled Eval. Board
Standard tape / reel size = 3000 pieces on a 7” reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 1 of 5 August 2009



AG302-63
AG302-63
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 22.1 , Icc = 35 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
16.0
-18
-20
+13.5
+26.6
3.3
500
15.9
-18
-20
+13.2
+26.6
3.3
900
15.6
-18
-18
+13.4
+26.4
3.4
1900
14.5
-18
-18
+12.2
+24.8
3.6
2140
14.2
-18
-15
+11.7
+24.3
3.6
2400
13.9
-18
-15
+11.6
+23.9
3.7
3500
12.5
-15
-14
+9.5
5800
9.2
-11
-8
1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 , Icc = 35 mA typical, 50 System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
16
Return Loss
0
I-V Curve
60
14
12
10
8
-40 C +25 C +85 C
6
0123
Frequency (GHz)
50
-10
40 Optimal operating point
-20 30
20
-30
S11 S22
10
-40
4 0123456
0
3.0
Frequency (GHz)
3.5 4.0
Device Voltage (V)
Output IP3 vs. Frequency
30
Output IP2 vs. Frequency
40
Noise Figure vs. Frequency
5
4.5
25 35 4
3
20 30
2
15
-40 C +25 C +85 C
10
25
-40c +25c +85c
20
1
-40 C
+25 C
+85 C
0
0 0.5 1 1.5 2 2.5 3
0 200 400 600 800 1000
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Frequency (MHz)
Frequency (GHz)
P1dB vs. Frequency
20
Output Power / Gain vs. Input Power
Output Power / Gain vs. Input Power
frequency = 900 MHz
frequency = 2000 MHz
16 16 14 16
15
10
5
-40 C +25 C +85 C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
14 Gain
12
10
8 Output Power
6
-20 -16 -12 -8 -4
Input Power (dBm)
0
12
8
4
0
-4
4
12 Gain
10
8
6
Output Power
4
-20 -16 -12 -8 -4
Input Power (dBm)
0
12
8
4
0
-4
4
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 5 August 2009







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