Gain Block. AG203-86 Datasheet

AG203-86 Block. Datasheet pdf. Equivalent

Part AG203-86
Description InGaP HBT Gain Block
Feature AG203-86 InGaP HBT Gain Block `Product Features • DC – 6000 MHz • 19.5 dB Gain @ 900 MHz • +8 dBm P.
Manufacture TriQuint Semiconductor
Datasheet
Download AG203-86 Datasheet



AG203-86
AG203-86
InGaP HBT Gain Block
`Product Features
DC – 6000 MHz
19.5 dB Gain @ 900 MHz
+8 dBm P1dB @ 900 MHz
+21 dBm OIP3@ 900 MHz
Single Voltage Supply
Internally matched to 50
Robust 1000V ESD, Class 1C
Lead-free/green/RoHS-compliant
SOT-86 package
Applications
Mobile Infrastructure
CATV / FTTX
WLAN / ISM
RFID
WiMAX / WiBro
Product Description
Functional Diagram
The AG203-86 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG203-86 typically provides
19.5 dB gain, +21 dBm OIP3, and +8 dBm P1dB. The
device combines dependable performance with consistent
quality to maintain MTTF values exceeding 1000 years at
mounting temperatures of +85 °C and is housed in a lead-
free/green/RoHS-compliant SOT-86 (micro-X) industry-
standard SMT package.
The AG203-86 consists of a Darlington-pair amplifier
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
GND
4
RF In 1
2
GND
Function
Input
Output/Bias
Ground
3 RF Out
Pin No.
1
3
2, 4
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG203-86 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and WiMAX.
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Test Frequency
Gain
Output P1dB
Output IP3 (2)
Device Voltage
Device Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
V
mA
Min
DC
16.2
Typ
900
19.4
25
15
+8.0
+20.8
+25
3.1
1900
17.2
+7.3
+20.7
4.05
20
Max
6000
18.2
1. Test conditions: 25 ºC, Supply Voltage = +5 V, Rbias = 47.5 , 50 System.
2. 3OIP measured with two tones at an output power of -10 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance (1)
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
20
-25
-15
+8.1
+20.8
3.1
Typical
900 1900
19.4 17.2
-25 -20
-15 -15
+8.0 +7.3
+20.8 +20.7
3.1 3.3
2140
16.6
-16
-15
+7.2
+20.5
3.3
Absolute Maximum Rating
Parameter
Storage Temperature
DC Voltage
RF Input Power (continuous)
Thermal Resistance, Rth
Junction Temperature
Rating
-55 to +125 °C
+4.5 V
+10 dBm
457°C/W
+177°C
Ordering Information
Part No.
AG203-86G
AG203-86PCB
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-86 Package)
700 – 2400 MHz Fully Assembled Eval. Board
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 3000 pieces on a 7” reel
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 March 2008



AG203-86
AG203-86
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 47.5 , Icc = 20 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
20.2
-20
-13
+8.2
+21.0
3.1
500
20.0
-25
-15
+8.1
+20.8
3.1
900
19.4
-25
-15
+8.0
+20.8
3.1
1900
17.2
-20
-15
+7.3
+20.7
3.3
2140
16.6
-16
-15
+7.2
+20.5
3.3
2400
16.0
-16
-14
+7.2
+20.3
3.4
3500
14.1
-16
-18
+6.5
5800
10.7
-16
-15
1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = 4.05 V, Rbias = 47.5 , Icc = 20 mA typical, 50 System.
2. 3OIP measured with two tones at an output power of -10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
22
20
18
16
14
-40 C +25 C +85 C
12
0123
Frequency (GHz)
Output IP3 vs. Frequency
25
Return Loss
0
I-V Curve
40
-10 30
Optimal operating point
-20 20
-30 10
S11 S22
-40 0
4
0123456
3.0
Frequency (GHz)
3.5 4.0
Device Voltage (V)
Output IP2 vs. Frequency
35
Noise Figure vs. Frequency
5
4.5
4
20 30
3
15 25
2
10 20
-40 C
+25 C
+85 C
5 15
0 0.5 1 1.5 2 2.5 3
0
Frequency (GHz)
-40c +25c +85c
200 400 600 800
Frequency (MHz)
1000
1
0
0
-40 C
+25 C
+85 C
0.5 1 1.5 2 2.5 3
Frequency (GHz)
P1dBvs. Frequency
10
Output Power / Gain vs. Input Power
Output Power / Gain vs. Input Power
frequency = 900 MHz
frequency = 2000 MHz
20 16 16 14
5
0
-5
-10
0
-40 C
+25 C
+85 C
0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
4
18 Gain
16
14
12 Output Power
10
-20 -16 -12 -8 -4
Input Power (dBm)
0
12
8
4
0
-4
4
14 Gain
12
10
8
Output Power
6
-20 -16 -12 -8 -4
Input Power (dBm)
0
10
6
2
-2
-6
4
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 2 of 5 March 2008







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)