Gain Block. EC1078 Datasheet

EC1078 Block. Datasheet pdf. Equivalent

Part EC1078
Description InGaP HBT Gain Block
Feature EC1078 InGaP HBT Gain Block Product Features • DC – 3.5 GHz • +21 dBm P1dB at 1 GHz • +37 dBm OIP3 .
Manufacture TriQuint Semiconductor
Datasheet
Download EC1078 Datasheet




EC1078
EC1078
InGaP HBT Gain Block
Product Features
DC – 3.5 GHz
+21 dBm P1dB at 1 GHz
+37 dBm OIP3 at 1 GHz
20 dB Gain at 1 GHz
4.4 dB Noise Figure at 2 GHz
Available in Lead-free / green
SOT-89 Package Style
Internally matched to 50
Applications
Mobile Infrastructure
CATV / FTTX
W-LAN / ISM
RFID
WiMAX / WiBro
Product Description
The EC1078B is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 1000 MHz, the EC1078B typically provides 20
dB of gain, +37 dBm Output IP3, and +21 dBm P1dB.
Functional Diagram
GND
4
The EC1078B consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation. The device is
ideal for wireless applications and is available in a low-cost,
surface-mountable lead-free/green/RoHS-compliant SOT-
89 package. All devices are 100% RF and DC tested.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the EC1078B will work for other various applications
within the DC to 3.5 GHz frequency range such as CATV
and mobile wireless.
1
RF IN
2
GND
3
RF OUT
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Output P1dB
Output IP3 (2)
Test Frequency
Gain
Large-signal Gain (3)
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
Test Frequency
Gain
Device Voltage
Device Current
Units
MHz
MHz
dB
dBm
dBm
MHz
dB
dB
dB
dB
dBm
dBm
dB
MHz
dB
V
mA
Min
DC
14.7
13
5.3
Typ
1000
20
+21
+37
2000
17
16
12
8
+20
+33
4.4
3000
14.5
5.6
96
Max
3500
5.9
1. Test conditions unless otherwise noted: 25º C, Supply Voltage = +7 V, Rbias = 14 , 50 System.
2. 3OIP measured with two tones at an output power of +7 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Large-signal gain is tested with an input power level of +3 dBm.
Typical Performance (1)
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3 (2)
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
20.7
-13
-12
+20.6
+37.5
3.1
Typical
900 1900
20 17.2
-14 -14
-12 -12
+21 +20.5
+37 +33.5
3.5 4.3
2140
16.6
-15
-12
+20
+32.5
4.4
Not Recommended For
New Designs
Recommended replacement parts:
TQP3M9008
Absolute Maximum Rating
Parameter
Storage Temperature
Device Current
RF Input Power (continuous)
Junction Temperature
Thermal Resistance, Rth
Rating
-55 to +150 °C
150 mA
+12 dBm
+160 °C
128 °C/W
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
EC1078B-G
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 package)
Standard T/R size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 1 of 4 August 2011



EC1078
EC1078
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +7 V, Rbias = 14 , Icc = 96 mA
Frequency MHz 100 500 900 1900 2140 2400 3500
S21 dB 21.2 20.7 20 17.2 16.6 15.9 13.5
S11 dB -13 -13 -14 -14 -15 -15 -13
S22 dB -11 -12 -12 -12 -12 -11 -9.2
Output P1dB dBm +20 +20.6 +21 +20.5 +20 +19
Output IP3
dBm +38 +37.5 +37 +33.5 +32.5 +32
Noise Figure dB 3.4 3.5 3.5 3.8 3.8 3.9
1. Test conditions: T = 25º C, Supply Voltage = +7 V, Device Voltage = 5.6 V, Rbias = 14 , Icc = 96 mA typical, 50 System.
2. 3OIP measured with two tones at an output power of +7 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. The performance data does not
account for losses attributed to recommended input and output series resistances shown in the application circuit on page 3.
Gainvs. Frequency
30
S11, S22 vs. Frequency
0
Iccvs. Vde
200
25
-4 S22
160
20 -8 120
15 25°C
10
-12 80
S11
5 -16 40
0 -20
0
0123456
Frequency (GHz)
0 1 Fre2quency3(GHz) 4 5 6
0
OIP3vs. Frequency
40
Noise Figurevs. Frequency
6
24
24
Vde (V)
P1dBvs. Frequency
6
8
35 5
30 4
25
20
500
3
25°C 85°C -40°C
2
1000 1500 2000 2500 3000
Frequency (MHz)
500
1000 1500
Frequency (MHz)
20
16
12
2000 500
25°C 85°C -40°C
1000 1500 2000 2500 3000
Frequency (MHz)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 4 August 2011







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