Document
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM™
128/144Mbit RDRAM
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Revision 1.01 October 1999
Page -2
Rev. 1.01 Oct. 1999
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM™
Revision History
Version 1.0 (July 1999) - Preliminary - Based on the Rambus Datasheet 1.0 ver.
Version 1.01 (October 1999) On page 1 - Delete the part numbers of low power. On page 32 - Add the data of CNFGA Register @ Figure 28. On page 33 - Add the data of CNFGB Register @ Figure 29 and correct the CORG4..0 field of CNFGB register. On page 44 - Add the Tj value from TBD to Max. 100°C @ Table 18. On page 46 - Add the ΘJC value from TBD to 0.2°C/Watt @ Table 20. On page 55 - Add the current values for 356MHz and 300MHz RDRAM device.
Page -1
Rev. 1.01 Oct. 1999
KM416RD8AC(D)/KM418RD8AC(D)
ORDERING INFORMATION
Direct RDRAM™
1 2 3 4 5 6 7 8 9 10
KM 4 XX XX XX X X - X X XX
SAMSUNG Memory Device Organization Product Density
1. SAMSUNG Memory
2. Device - 4 : D.