1N5196

AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 GENERAL PURPOSE SILICON DIODES METALLURGICALLY BONDED 1N5194 1N5195 1N5196 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE VRM V RWM IO IO TA = 150°C mA 50 50 50 I FSM TP = 1/120 s TA = 25°C A 2 2 2 V (pk) 1N5194 1N5195 1N5196 80 180 250 V (pk) 70 180 225 mA 200 200 200 FIGURE 1 TYPE VF @100mA I R1 at V RWM TA = 25°C nA dc 25 25 25 I R2 at V RM TA = 25°C µA 100 100 100 I R3 at V RWM TA = 150°C µA dc 5 5 5 DESIGN DATA CASE: Hermetically sealed glass case. DO – 35 outline. LEAD MATERIAL: Copper clad steel. LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 250 ˚C/W maximum THERMAL IMPEDANCE: (ZOJX): 70 ˚C/W maximum POLARITY: Cathode end is banded. MOUNTING POSITION: ANY. V dc 1N5194 1N5195 1N5196 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: [email protected] IN5194 1000 thru IN5196 100 IF - Forward Current - (mA) 10 15 0ºC 100 ºC 25º C 1 0.1 .3 .4 .5 .6 .7 .8 .9 1.0 VF - Forward Voltage (V) FIGURE 2 Typical Forward Current vs Forward Voltage 1.1 1.2 1.3 1000 100 IR - Reverse Current - (µA) 10 1 150ºC 0.1 C 100º 25ºC .01 -65ºC -65ºC NOTE : ....