VOLTAGE SUPPRESSOR. 5.0SMDJ36CA Datasheet

5.0SMDJ36CA SUPPRESSOR. Datasheet pdf. Equivalent

Part 5.0SMDJ36CA
Description SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Feature MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656.
Manufacture MDE Semiconductor
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5.0SMDJ36CA
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
5.0 SMDJ SERIES
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE-5.0 TO 170 Volts
5000 Watt Peak Pulse Power
FEATURES
• For surface mounted applications in order to
optimize board space
• Low profile package
• Built-in strain relief
• Glass passivated junction
• Low inductance
• Excellent clamping capability
• Repetition rate (duty cycle):0.01%
• Fast response time: typically less than
1.0 ps from 0 volts to BV for unidirectional types
• Typical IR less than 1µA above 10V
• High temperature soldering:
250°C/10 seconds at terminals
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-O
MECHANICAL DATA
Case: JEDEC DO214AB. Molded plastic over glass
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denoted positive end (cathode)
except Bidirectional
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.007 ounces, 0.021 grams)
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types 5.0SMDJ5.0 thru types 5.0SMDJ170 (e.g. 5.0SMDJ5.0C, 5.0SMDJ170CA)
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
RATING
SYMBOL
VALUE
Peak Pulse Power Dissipation on 10/1000 µs
waveform (NOTE 1, 2, Fig.1)
PPPM
Minimum 5000
Peak Pulse Current of on 10/1000 µs waveform (Note 1,Fig 3)
IPPM SEE TABLE 1
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed on Rated Load, (JEDEC Method)(Note2, 3)
IFSM
400
Operatings and Storage Temperature Range
NOTES:
TJ, TSTG
-55 +150
1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.
2. Mounted on 8.0mm x 8.0mm Copper Pads to each terminal.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.
UNITS
Watts
Amps
Amps
°C
Certified RoHS Compliant
UL File # E223026
11/13/2013



5.0SMDJ36CA
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES 5.0SMDJ SERIES
Fig. 1 - Peak Pulse Power Rating Curve
1000
100
10
1
0.1
100ns
1µs 10µs
td - Pulse Width (sec.)
100µs
Fig.3 - Pulse Waveform
150
tr = 10μsec.
TJ = 25°C
Pulse Width(td)is defined
Peak Value
IPPM
100
as the point where the
peak current decays to
50% of IPPM
Half Value- IPPM
2
50 10/1000μsec.Waveform
as defined by R.E.A.
td
0
0
1.0 2.03.0
t - Time(ms)
3.0 4.0
Fig. 5 - Steady State Power
Derating Curve
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
60Hz
Resistive or
Inductive Load
25 50 75 100 125 150 175
4.0
TL - Lead Temperature (°C)
100
87.5
75
62.5
50
37.5
25
12.5
0
0
Fig.2 - Pulse Derating Curve
25 50 75 100 125 150 175 200
TA - Ambient Temperature (°C)
1000000
Fig. 4 - Typical Junction Capacitance
10000
Uni-directional V=OV
Bi-directional V=OV
100
Uni-directional @VR
1 Bi-directional @VR
1 10 100 1000
VWM - Reverse Stand-Off
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
350
8.3ms Single Half Sine-Wave
(JEDEC Method)TJ=TJ max.
300
250
200
150
100
50
1
10 100
Number of Cycles at 60 Hz
11/13/2013





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