BRIDGE RECTIFIE. EDB106S Datasheet

EDB106S RECTIFIE. Datasheet pdf. Equivalent

Part EDB106S
Description SINGLE-PHASE GLASS PASSIVATED SUPER FAST SURFACE MOUNT SILICON BRIDGE RECTIFIE
Feature EDB101S THRU EDB106S SINGLE-PHASE GLASS PASSIVATED SUPER FAST SURFACE MOUNT SILICON BRIDGE RECTIFIE.
Manufacture HORNBY
Datasheet
Download EDB106S Datasheet

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EDB101S THRU EDB106S Datasheet
Production specification SILICON BRIDGE RECTIFIERS EDB101S EDB106S Datasheet
EDB101S THRU EDB106S SINGLE-PHASE GLASS PASSIVATED SUPER FA EDB106S Datasheet
Recommendation Recommendation Datasheet EDB106S Datasheet





EDB106S
EDB101S THRU EDB106S
SINGLE-PHASE GLASS PASSIVATED SUPER FAST SURFACE MOUNT SILICON BRIDGE RECTIFIER
REVERSE VOLTAGE:
FORWARD CURRENT:
50 to 400 VOLTS
1.0 AMPERE
FEATURES
· Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
· High surge overload rating of 50 Amperes peak
· Ideal for printed circuit board
· Superfast recovery times for high efficiency
· Glass passivated chip junction
DB-S
MECHANICAL DATA
Case: Molded plastic, DB-S
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-202,
method 208 guaranteed
Mounting position: Any
Weight: 0.02ounce, 0.4gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current at TA=40
Peak Forward Surge Current,
8.3ms single half-sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage at 1.0A DC and 25
Maximum Reverse Current
at Rated DC Blocking Voltage
at TA=25
TA=125
Typical Junction Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 3)
Typical Thermal Resistance (Note 2)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Symbols
VRRM
VRMS
VDC
EDB101S
50
35
50
EDB102S
100
70
100
EDB103S
150
105
150
EDB104S
200
140
200
EDB105S
300
210
300
EDB106S
400
280
400
Units
Volts
Volts
Volts
I(AV) 1.0 Amp
IFSM
VF
IR
CJ
TRR
RθJA
RθJL
TJTstg
50
1.05
5.0
1000
15
50
38
12
-55 to +150
1.25
Amp
Volts
uAmp
pF
nS
/W
/W
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13mm) copper pads
3- Reverse Recovery Test ConditionsIF=.5AIR=1AIRR=.25A.



EDB106S
EDB101S THRU EDB106S
SINGLE-PHASE GLASS PASSIVATED SUPER FAST SURFACE MOUNT SILICON BRIDGE RECTIFIER
RATINGS AND CHARACTERISTIC CURVES





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