SILICON RECTIFIER. 10A10 Datasheet

10A10 RECTIFIER. Datasheet pdf. Equivalent

Part 10A10
Description GENERAL PURPOSE SILICON RECTIFIER
Feature 10A05 THRU 10A10 GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Curren.
Manufacture JQC
Datasheet
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10A10
10A05 THRU 10A10
GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 10.0 Amperes
R-6 FEATURES
0.360 (9.1)
0.340(8.6)
DIA.
1.0 (25.4)
MIN.
0.360(9.1)
0.340(8.6)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,0.375(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.052 (1.3)
0.048 (1.2)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: R-6 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.072 ounce, 2.05 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375(9.5mm) lead length at TA=60 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 10.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS 10A05 10A1 10A2 10A4 10A6 10A8 10A10 UNITS
VRRM
VRMS
VDC
50 100 200 400 600 800 1000 VOLTS
35 70 140 280 420 560 700 VOLTS
50 100 200 400 600 800 1000 VOLTS
I(AV) 10.0
Amps
IFSM
VF
IR
CJ
RθJA
TJ,TSTG
400
1.0
10.0
400
120
10.0
-55 to +150
Amps
Volts
µA
pF
C/W
C
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted



10A10
RATINGS AND CHARACTERISTIC CURVES 10A05 THRU 10A10
FIG. 1- FORWARD CURRENT DERATING CURVE
10.0
8.0
6.0
4.0 Single Phase
Half Wave 60Hz
Resistive or
inductive Load
2.0
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
200
100
10
TJ=25 C
1 PULSE WIDTH=300 µs
1%DUTY CYCLE
0.1
0.5 0.7 0.9 1.1 1.3 1.4
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
2000
1000
TJ=25 C
100
10
0.1
1.0 10
REVERSE VOLTAGE,VOLTS
100
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
400
320
240
160
80 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
TJ=150 C
100
10 TJ=100 C
1
0.1
TJ=25 C
0.01 0
20 40
60 80 100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1 1
10
t,PULSE DURATION,sec.
100





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