Rectifier Diodes. 10A05 Datasheet

10A05 Diodes. Datasheet pdf. Equivalent

Part 10A05
Description Silicon Rectifier Diodes
Feature 10A05 ... 10A10 10A05 ... 10A10 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2.
Manufacture Diotec
Datasheet
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10A05
10A05 ... 10A10
10A05 ... 10A10
Silicon Rectifier Diodes – Silizium-Gleichrichterdioden
Version 2013-12-09
Nominal Current
Nennstrom
Ø 8.8±0.2
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Type
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Ø 1.3±0.05
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions - Maße [mm]
10 A
1000 V
Ø 8.8 x 8.8 [mm]
R-6 Style
1.65 g
Maximum ratings
Type
Typ
10A05
10A1
10A2
10A4
10A6
10A8
10A10
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
600
800
1000
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
50
100
200
400
600
800
1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TA = 50°C
f > 15 Hz
TA = 25°C
TA = 25°C
IFAV
IFRM
IFSM
i2t
Tj
TS
10 A 1)
72 A 1)
360/400 A
1.8 A2s
-50...+150°C
-50...+150°C
1 Valid, if leads are kept at ambient temperature at a distance of 9,5 mm from case
Gültig, wenn die Anschlussdrähte in 9,5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1



10A05
Characteristics
Forward voltage – Durchlass-Spannung
Leakage current – Sperrstrom
Tj = 25°C
Tj = 25°C
Tj = 100°C
IF = 10 A
VR = VRRM
VR = VRRM
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to leads
Wärmewiderstand Sperrschicht – Anschlussdraht
VF
IR
IR
RthA
RthL
10A05 ... 10A10
Kennwerte
< 1.0 V
< 10 µA
< 100 µA
< 14 K/W 1)
< 2.8 K/W
120
[%]
100
80
60
40
20
IFAV
0
0 TA 50 100 150 [°C]
Rated forward current versus ambient temperature
Zul. Richtstrom in Abh. von der Umgebungstemp.
103
[A]
102
Tj = 125°C
Tj = 25°C
10
1
IF
10-1
400a-(10a-1v)
0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10 3
[A]
10 2
î 3 .14 IFAV
F
IFAV
10
1
10
10 2
[n] 1 03
Peak forward surg e current versus numb er of cycles at 50 Hz
Durchlaß-Spitzenstrom in Ab h. von d er Zahl d er Halb wellen b ei 50 Hz
1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG





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