SILICON RECTIFIERS. 10A8 Datasheet

10A8 RECTIFIERS. Datasheet pdf. Equivalent

Part 10A8
Description PLASTIC SILICON RECTIFIERS
Feature PLASTIC SILICON RECTIFIERS FEATURES ● Low cost ● Diffused junction ● Low forward voltage drop ● Low .
Manufacture HY
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10A8
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost
Diffused junction
Low forward voltage drop
Low reverse leakage current
High current capability
The plastic material carries UL recognition 94V-0
10A05 thru 10A10
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 10.0 Amperes
R-6
1.0(25.4)
MIN
.052(1.3)
.048(1.2) DIA
MECHANICAL DATA
Case: JEDEC R-6 molded plastic
Polarity: Color band denotes cathode
Weight: 0.07 ounces , 2.1 grams
Mounting position: Any
.360(9.1)
.340(8.6)
2100
.360(9.1)
.340(8.6)
DIA
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA =60
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Maximum Forward Voltage at 10A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25
@TJ=100
Typical Junction Capacitance (Note1)
SYMBOL
VRRM
VRMS
VDC
10A05
50
35
50
I(AV)
IFSM
VF
IR
CJ
Typical Thermal Resistance (Note2)
RθJC
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction to case.
10A1
100
70
100
10A2
200
140
200
10A4
400
280
400
10.0
10A6
600
420
600
400
1.0
10
100
150
6.0
-55 to +150
-55 to +150
10A8
800
560
800
10A10
1000
700
1000
UNIT
V
V
V
A
A
V
μA
pF
/W
~ 26 ~
REV. 1, 30-Dec-2011



10A8
RATING AND CHARACTERISTIC CURVES
10A05 thru 10A10
FIG. 1 FORWARD CURRENT DERATING CURVE
12.0
10.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
8.0
6.0
4.0
2.0
0
25
50
75 100 125 150 175
AMBIENT TEMPERATURE ()
FIG. 2 MAXIMUM NON-REPETITIVE SURGE CURRENT
400
300
200
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
100
0
12
5 10 20
50 100
NUMBER OF CYCLES AT 60Hz
1000
FIG.3 TYPICAL JUNCTION CAPACITANCE
TJ = 25°C
f = 1 MHz
100
0
1 4 10
100
REVERSE VOLTAGE,VOLTS
FIG.4-TYPICAL FORWARD CHARACTERISTICS
100
0
10
TJ = 25°C
1.0
PULSE WIDTH 300us
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE ,VOLTS
~ 27 ~
REV. 1, 30-Dec-2011





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