STANDARD DIODE. 10A10 Datasheet

10A10 DIODE. Datasheet pdf. Equivalent

Part 10A10
Description 10A HIGH CURRENT STANDARD DIODE
Feature ® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capabil.
Manufacture WON-TOP
Datasheet
Download 10A10 Datasheet

www.DataSheet.co.kr SIYU R 50--1000V 10 A Features R-6 10A10 Datasheet
Naina Semiconductor Ltd. Silicon Rectifier, 10.0A Features • 10A10 Datasheet
10A05 THRU 10A10 GENERAL PURPOSE SILICON RECTIFIER Reverse V 10A10 Datasheet
10A05 THRU 10A10 GENERAL PURPOSE PLASTIC RECTIFIERS Reverse 10A10 Datasheet
10A05-10A10 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 --- 10A10 Datasheet
10A05 THRU 10A10 10.0 AMP SILICON RECTIFIERS FEATURES * Lo 10A10 Datasheet
$$ 9ROWDJH5DQJHWR9  FoUZDUG&XUU 10A10 Datasheet
R-6 0.360 (9.1) 0.340(8.6) DIA. 1.0 (25.4) MIN. 0.360(9.1) 10A10 Datasheet
JJF SILICON RECTIFIER R SEMICONDUCTOR 10A05 THRU 10A10 GEN 10A10 Datasheet
10A05 ... 10A10 10A05 ... 10A10 Silicon Rectifier Diodes – 10A10 Datasheet
Recommendation Recommendation Datasheet 10A10 Datasheet





10A10
®
WON-TOP ELECTRONICS
Features
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
10A05 – 10A10
10A HIGH CURRENT STANDARD DIODE
Pb
AB
A
Mechanical Data
Case: P-600, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 2.1 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
P-600
Dim Min Max
A 25.4 —
B 8.60 9.10
C 1.20 1.30
D 8.60 9.10
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol 10A05 10A1 10A2 10A4 10A6 10A8 10A10 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
RMS Reverse Voltage
VR(RMS)
Average Rectified Output Current (Note 1) @TA = 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
IO
IFSM
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
@IF = 10A
@TA = 25°C
@TA = 100°C
VFM
IRM
CJ
Typical Thermal Resistance Junction to Ambient (Note 3) R JA
Operating and Storage Temperature Range
TJ, TSTG
50
35
100 200 400 600 800 1000 V
70 140 280 420 560 700 V
10 A
600 A
1.0
10
100
150
15
-50 to +150
80
V
µA
pF
°C/W
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
3. Mounted on FR-4 PCB with 30mm x 30mm copper pad.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1



10A10
10A05 – 10A10
10
100
®
WON-TOP ELECTRONICS
8
10
6
4
2
Resistive or
Inductive Load
0
0 15 30 45 60 75 90 105 120 135 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
600
Single Half-Sine-Wave
JEDEC Method
480
360
240
120
1.0
0.1
0
0.4 0.8 1.2 1.6 2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
100
TA = 125°C
10
TA = 100°C
1.0
TA = 25°C
0.1
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
250
200
150
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
f = 1MHz
10A05 – 10A4
100
10A6 – 10A10
50
www.wontop.com
2
0
0.1
1 10
VR, DC REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
100
© Won-Top Electronics Co., Ltd.
Revision: September, 2012





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)