MOUNT RECTIFIER. GS1J-A Datasheet

GS1J-A RECTIFIER. Datasheet pdf. Equivalent

Part GS1J-A
Description SURFACE MOUNT RECTIFIER
Feature DATA SHEET SEMICONDUCTOR GS1A- A THRU GS1M- A SURFACE MOUNT RECTIFIER VOLTAGE- 50 to 1000 Volts C.
Manufacture YS
Datasheet
Download GS1J-A Datasheet

DATA SHEET SEMICONDUCTOR GS1A- A THRU GS1M- A SURFACE MOU GS1J-A Datasheet
GS1A-AU~GS1M-AU SURFACE MOUNT RECTIFIER VOLTAGE 50 to 1000 GS1J-AU Datasheet
Recommendation Recommendation Datasheet GS1J-A Datasheet





GS1J-A
DATA SHEET
SEMICONDUCTOR
GS1A- A THRU GS1M- A
SURFACE MOUNT RECTIFIER
VOLTAGE- 50 to 1000 Volts CURRENT - 1.0 Amperes
H
FE ATURES
For surface mou nted applications
Lo w profile package
Built-in strain reli ef
Easy pick and place
Plastic package has Und erw riters Laboratory Flammability
Classification 9 4 V-O
Lo w Forw ard Drop
Glass passivated dip Junction
High tempera ture soldering : 260 OC / 10 seconds at terminals
Pb free product at available:99% Sn above meet RoHS
environment substance directive request
AEC-Q 101 qualified
MECHAN ICAL D ATA
Case :JEDEC D O -214AC molded plastic
Base P/N - RoHS compliant, commercial grade
Base P/N-A - RoHS compliant, AEC-Q101 qualified
Terminals:Solder plated, solderable per MIL-STD-750 ,
Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
SMA/DO-214AC Unit:inch(mm)
.062(1.60)
.047(1.20)
.114(2.90)
.098(2.50)
.181(4.60)
.157(4.00)
.096(2.44)
.078(2.00)
.060(1.52)
.030(0.76)
.008(.203 )
.002(.051)
.208(5.28)
.188(4.80)
.012(.305)
.006(.152)
MAXIM UM RATING S AND ELECTRICAL CH ARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
S Y M B OLS
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRM S
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current,
at TL=75°C
I(AV)
Peak For ward Surge Current 8.3ms single ha lf sine- wave
super imposed on rated load (J EDEC method)
IFSM
Maximum I nstanta neous Forward Vol tage at 1.0A
VF
Maximum DC Reverse Current TA=25°C
at Rated DC Blocking Voltage TA=125°C
IR
Maximum Reverse Recovery Time(Note 1) TJ=25°C
TR R
Typical Junction Capacitance (Note 2)
CJ
Maximum Therma l Resistance(Note 3)
RθJA
Operating and Storage Temperature Range
TJ ,TSTG
NOTES:
1. Reverse Recovery Test Condition s: IF=0.5A, IR=1.0A, I rr=0.25A
2. Measured at 1 MHz and applied Vr = 4.0 volts.
3. 8.0 mm2 ( .013mm thick ) land areas.
GS1A
50
35
50
GS1B
100
70
100
GS1D
200
140
200
GS1G
400
280
400
1.0
GS1J
600
420
600
30.0
1.1
5.0
100
2.5
2.5
15.0
-55 tO +1 50
G S1K
800
560
800
GS1M
1000
700
1000
UNITS
V
V
V
A
A
V
µA
µA
µs
PF
° C /W
°C
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1
REV.03 20150105



GS1J-A
RATING AND CHARACTERISTIC CURVES
GS1A- A THRU GS1M- A
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
P.C.B MOUNTED ON 0.315 X 0.315" (8.0 x 8.0mm)
COPPER PAD AREAS
1.0
0
50 75
100
LEAD TEMPERATURE, O C
Fig.1-FORWARD CURRENT DERATING CURVE
100
150
10
TJ = 100OC
1.0
0.1
0.01
TJ = 75OC
TJ = 25OC
0.001
0
20 40
60 80 100 120 140
PERCENT OF PEAK REVERSE VOLTAGE, %
Fig.3-TYPICAL REVERSE CHARACTERISTICS
100
50
20
10
Units Mounted On
20in2 (5.4mm)+0.5mil
5 inches(0.013mm)
Thick copper Land Areas
2
1
0.01
0.1
1.0
10
HEATING TIME(SEC)
Fig.5-TRANSIENT THERMAL IMPEDANCE
100
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
30
8.3ms Single Half Sine-Wave
25 JEDEC Method
20
15
10
5
0
12
6 10
20 40 60 100
NUMBER OF CYCLES AT 60Hz
Fig.4-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
50
20
10
5
TJ = 25OC
f = 1.0mHz
Vsig = 50mVp-p
2
1
0.1 1.0
10 100
REVERSE VOLTAGE, VOLTS
Fig.6-TYPICAL JUNCTION CAPACITANCE
1000
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2
REV.03 20150105





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