regulator diodes. 1N5236B Datasheet

1N5236B diodes. Datasheet pdf. Equivalent


Part 1N5236B
Description Voltage regulator diodes
Feature DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N5225B to 1N5267B Voltage regulator diodes Product spe.
Manufacture NXP
Datasheet
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1N5236B
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
1N5225B to 1N5267B
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Apr 26



1N5236B
Philips Semiconductors
Voltage regulator diodes
Product specification
1N5225B to 1N5267B
FEATURES
Total power dissipation:
max. 500 mW
Tolerance series: ±5%
Working voltage range:
nom. 3.0 to 75 V
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
Low-power voltage stabilizers or
voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The series consists of 43 types with nominal working voltages from 3.0 to 75 V.
handbook, halfpage k
a
MAM239
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
IF continuous forward current
IZSM non-repetitive peak reverse current
Ptot total power dissipation
PZSM
non-repetitive peak reverse power
dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
Tamb = 50 °C; lead length max.;
note 1
Lead length 8 mm; note 2
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.3
tp = 8.3 ms; square wave;
Tj 55 °C prior to surge
Notes
1. Device mounted on a printed circuit-board without metallization pad.
2. Tie-point temperature 75 °C.
MIN. MAX.
250
see Table
“Per type”
400
UNIT
mA
mW
500 mW
40 W
10 W
65 +200 °C
65 +200 °C
ELECTRICAL CHARACTERISTICS
Table 1
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
CONDITIONS
IF = 200 mA; see Fig.4
MAX.
1.1
UNIT
V
1996 Apr 26
2







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