Document
Embedded LPDDR2 SDRAM Features
Embedded LPDDR2 SDRAM
EDB8132B4PB-8D-F
Features
• Ultra-low-voltage core and I/O power supplies • Frequency range
– 400 MHz (data rate: 800 Mb/s/pin) • 4n prefetch DDR architecture • 8 internal banks for concurrent operation • Multiplexed, double data rate, command/address
inputs; commands entered on each CK_t/CK_c edge • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) • Programmable READ and WRITE latencies (RL/WL) • Burst length: 4, 8, and 16 • Per-bank refresh for concurrent operation • Auto temperature-compensated self refresh (ATCSR) by built-in temperature sensor • Partial-array self refresh (PASR) • Deep power-down mode (DPD) • Selectable output drive strength (DS) • Clock-stop capability • Lead-free (RoHS-compliant) and halogen-free packaging
Options
• Density/Chip select – 8Gb/2-CS - dual die
• Organization – x32
• VDD1/VDD2/VDDQ: 1.8V/1.2V/1.2V • Revision • FBGA “green” p.