EDB8132B4PB-8D-F-D

Preliminary‡ 168-Ball LPDDR2 SDRAM Addendum Features Data Sheet Addendum: LPDDR2 SDRAM EDB8132B4PB-8D-F-R, EDB8132B4PB-8D-F-D Features This addendum documents features of the Micron® 4Gb Mobile Low-Power DDR2 SDRAM (LPDDR2) device. This addendum does not provide detailed device information. The standard density-specific device data sheet provides a complete description of device functionality, operating modes, and specifications unless specified herein. Information provided here is in addition to or supersedes information in the device data sheet. Ultra-low-voltage core and I/O power supplies Frequency range – 400 MHz (data rate: 800 Mb/s/pin) 4n prefetch DDR architecture 8 internal banks for concurrent operation Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) Programmable READ and WRITE latencies (RL/WL) Burst length: 4, 8, and 16 ...