MT42L256M64D4

4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4, MT42L384M32D3 Features Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V – VDDCA/VDDQ = 1.14–1.30V – VDD1 = 1.70–1.95V Clock frequency range – 533–10 MHz (data rate range: 1066–20 Mb/s/pin) Four-bit prefetch DDR architecture Eight internal banks for concurrent operation Multiplexed, double data rate, command/address inputs; commands entered on every CK edge Bidirectional/differential data strobe per byte of data (DQS/DQS#) Programmable READ and WRITE latencies (RL/WL) Programmable burst lengths: 4, 8, or 16 Per-bank refresh for concurrent operation On-chip temperature sensor to control self refresh rate Partial-array self refresh (PASR) Deep power-down mode (DPD) Selectable output drive strength (DS) Clock stop capability R...