INA-32063 RFIC Amplifier Datasheet

INA-32063 Datasheet, PDF, Equivalent


Part Number

INA-32063

Description

3.0 GHz Wideband Silicon RFIC Amplifier

Manufacture

HP

Total Page 10 Pages
Datasheet
Download INA-32063 Datasheet


INA-32063
3.0 GHz Wideband Silicon
RFIC Amplifier
Technical Data
INA-32063
Features
• 17 dB Gain at 1.9 GHz
• +3 dBm P1 dB at 1.9 GHz
• Single +3V Supply
• Unconditionally Stable
Applications
• LO Buffer and Driver
Amplifier for Cellular,
Cordless, Special Mobile
Radio, PCS, ISM, Wireless
LAN, DBS, TVRO, and TV
Tuner
Simplified Schematic
Surface Mount SOT-363
(SC-70) Package
Pin Connections and
Package Marking
GND 2 1
GND 1 2
INPUT 3
6 OUTPUT
& Vd
5 GND 1
4 Vd
Note: Package marking provides
orientation and identification.
Vd
Output & Vd
Description
Hewlett-Packard’s INA-32063 is a
Silicon RFIC amplifier that offers
excellent gain and output power
for applications to 3.0 GHz.
Packaged in an ultraminiature
SOT-363 package, it requires half
of the board space of a SOT-143
package.
The INA-32063 offers wide
bandwidth and good linearity and
17 dB gain with a modest supply
current. With its input and output
matched internally to 50 , the
INA-32063 is a simple to use gain
block that is suitable for
numerous applications.
The INA-32063 is fabricated using
HP’s 30 GHz – fmax, ISOSAT™
Silicon-bipolar process that uses
nitride, self-alignment,
submicrometer lithography,
trench isolation, ion implantation,
and polyimide intermetal dielec-
tric and scratch protection to
achieve superior performance,
uniformity and reliability.
Input
Gnd1
Gnd2

INA-32063
2
Absolute Maximum Ratings
Symbol
Vd
Pin
Tj
TSTG
Parameter
Device Voltage,
RF output to ground
CW RF Input Power
Junction Temperature
Storage Temperature
Units
V
Absolute
Maximum[1]
6.0
dBm
°C
°C
+7.0
150
-65 to 150
Thermal Resistance[2]:
θjc = 170°C/W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. TC = 25°C (TC is defined to be the
temperature at the package pins where
contact is made to the circuit board)
INA-32063 Electrical Specifications, TC = 25°C, ZO = 50 ,Vd = 3 V
Symbol
Parameters and Test Conditions
Units Min. Typ. Max. Std.
Dev.[4]
|S 21|2
Gain in 50 system
f = 0.9 GHz dB
16.8
f = 1.9 GHz
15.5[3] 17.8
f = 2.4 GHz
18.2
0.39
NF50
P1dB
Noise Figure
Output Power at 1 dB Gain Compression
f = 1.9 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
dB
dBm
4.4 0.21
3.6
4.8
4.0
IP3 Output Third Order Intercept Point
f = 0.9 GHz dBm
f = 1.9 GHz
f = 2.4 GHz
15.3
14.4
11.5
VSWRin
VSWRout
Ιd
Input VSWR
Output VSWR
Device Current
f = 0.1 – 2.4 GHz
f = 0.1 – 2.4 GHz
mA
1.1:1
1.6:1
20
25[3]
1.1
Notes:
3. Guaranteed specifications are 100% tested in production.
4. Standard deviation number is based on measurement of a large number of parts from three non-consecutive wafer lots
during the initial characterization of this product, and is intended to be used as an estimate for distribution of the
typical specification.


Features 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz • +3 dBm P1 dB at 1.9 GHz • Single +3V Supply • U nconditionally Stable Applications • LO Buffer and Driver Amplifier for Cell ular, Cordless, Special Mobile Radio, P CS, ISM, Wireless LAN, DBS, TVRO, and T V Tuner Simplified Schematic Surface M ount SOT-363 (SC-70) Package Pin Conne ctions and Package Marking GND 2 1 GND 1 2 INPUT 3 32 6 OUTPUT & Vd 5 GND 1 4 Vd Note: Package marking provides o rientation and identification. Vd Out put & Vd Description Hewlett-Packard s INA-32063 is a Silicon RFIC amplifie r that offers excellent gain and output power for applications to 3.0 GHz. Pac kaged in an ultraminiature SOT-363 pack age, it requires half of the board spac e of a SOT-143 package. The INA-32063 o ffers wide bandwidth and good linearity and 17 dB gain with a modest supply cu rrent. With its input and output matche d internally to 50 Ω, the INA-32063 is a simple to use gain b.
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