General-Purpose Rectifiers. S3M Datasheet

S3M Rectifiers. Datasheet pdf. Equivalent


ON Semiconductor S3M
General-Purpose Rectifiers
S3A-S3N
Features
LowProfile Package
GlassPassivated Junction
UL Flammability Classification: 94V0
UL Certified, UL #E258596
These are PbFree Devices
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Value
Symbol
Parameter
S3A S3B S3D S3G S3J S3K S3M S3N Unit
VRRM
Maximum
Repetitive
Reverse Voltage
50 100 200 400 600 800 1000 1200 V
VRMS
RMS
Reverse Voltage
35
70 140 280 420 560 700 840
V
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Cathode
(2)
Anode
(1)
SMC
CASE 403AG
VR
DC 50 100 200 400 600 800 1000 1200 V
Blocking Voltage
IF(AV)
IFSM
Average Rectified
Forward Current
TL = 105°C
Non-Repetitive
Peak Forward
Surge Current
8.3 ms Single
Half-Sine-Wave
3.0
100
A
Anode
Cathode
(1) (2)
A
MARKING DIAGRAM
TSTG
Storage
Temperature
Range
55 to +150
°C
TJ Operating
Junction
Temperature
Range
55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Note 1)
Symbol
Parameter
Value
Unit
$Y&Z&3
S3X
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
S3X = Specific Device Code
X = AN
PD Power Dissipation
2.6 W
RqJA Thermal Resistance, Junction-to-Ambient
100
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
RqJL Thermal Resistance, Junction-to-Lead
13 °C/W
1. Device is mounted on FR4 PCB 0.013 mm. Land pattern size: refer to the
package drawing. Trace size: force line = 50 mil & sense line = 4 mil.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted (per leg))
Value
Symbol
Parameter
Conditions
S3A S3B S3D S3G S3J S3K S3M S3N Unit
VF Maximum Forward Voltage
IF = 3.0 A
1.2 V
trr Typical Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
2.5
ms
IR
Maximum Reverse Current at
Rated VR
TA = 25_C
TA = 125_C
5 mA
250
CT Typical Total Capacitance
VR = 4.0 V, f = 1.0 MHz
60 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 2001
February, 2020 Rev. 6
1
Publication Order Number:
S3N/D


S3M Datasheet
Recommendation S3M Datasheet
Part S3M
Description General-Purpose Rectifiers
Feature S3M; General-Purpose Rectifiers S3A-S3N Features • Low−Profile Package • Glass−Passivated Junction • UL .
Manufacture ON Semiconductor
Datasheet
Download S3M Datasheet




ON Semiconductor S3M
S3AS3N
TYPICAL PERFORMANCE CHARACTERISTICS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50 60 70 80 90 100 110 120 130 140 150
Lead Temperature [5C]
Figure 1. Forward Current Derating Curve
100
10
1
TJ = 25°C
Pulse Width = 300 ms
0.1 2% Duty Cycle
0.01
0.6
0.7 0.8 0.9 1.0 1.1 1.2
Forward Voltage, VF [V]
1.3
Figure 2. Forward Voltage Characteristics
120
8.3 ms Single Half
100 Sine-Wave JEDEC
Method
80
60
40
20
0
12
5 10 20
50 100
Number of Cycles at 60 Hz
Figure 3. Non-Repetitive Surge Current
100
TA = 125°C
10
1
TA = 25°C
0.1
0
20 40 60 80 100 120
% of Reverse Voltage, VR [V]
140
Figure 4. Reverse Current vs. Reverse Voltage
100
50
10
5
1
5 10
50 100
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
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ON Semiconductor S3M
S3AS3N
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
S3A
S3A
DO214AB (SMC)
3000 / Tape & Reel
S3B S3B (PbFree)
S3D S3D
S3G
S3G
S3J S3J
S3K S3K
S3M
S3M
S3N S3N
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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