Mount Rectifier. S3A Datasheet

S3A Rectifier. Datasheet pdf. Equivalent


Taiwan Semiconductor S3A
S3A - S3M
Taiwan Semiconductor
3A, 50V - 1000V Surface Mount Rectifier
FEATURES
Glass passivated chip junction
Ideal for automated placement
Low forward voltage drop
High current capability
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
KEY PARAMETERS
PARAMETER VALUE UNIT
IF(AV)
VRRM
IFSM
TJ MAX
Package
3A
50 - 1000 V
100 A
150 °C
DO-214AB (SMC)
Configuration
Single die
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL S3A S3B S3D S3G S3J
Marking code on the device
S3A S3B S3D S3G S3J
Repetitive peak reverse voltage
VRRM
50 100 200 400 600
Reverse voltage, total rms value
VR(RMS)
35 70 140 280 420
Maximum DC blocking voltage
VDC 50 100 200 400 600
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave uperimposed on
rated load per diode
Junction temperature
IF(AV)
IFSM
TJ
3
100
- 55 to +150
Storage temperature
TSTG
- 55 to +150
S3K S3M
S3K S3M
800 1000
560 700
800 1000
UNIT
V
V
V
A
A
°C
°C
1 Version:L1708


S3A Datasheet
Recommendation S3A Datasheet
Part S3A
Description Surface Mount Rectifier
Feature S3A; S3A - S3M Taiwan Semiconductor 3A, 50V - 1000V Surface Mount Rectifier FEATURES ● Glass passivated.
Manufacture Taiwan Semiconductor
Datasheet
Download S3A Datasheet




Taiwan Semiconductor S3A
S3A - S3M
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
SYMBOL
RӨJL
RӨJA
LIMIT
13
47
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
Forward voltage per diode (1)
IF = 3A, TJ = 25°C
VF
Reverse current @ rated VR per diode (2) TJ = 25°C
TJ = 125°C
IR
Junction capacitance
1 MHz, VR=4.0V
CJ
Reverse recovery time
Notes:
IF=0.5A , IR=1.0A
IRR=0.25A
trr
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
TYP.
-
-
-
60
1500
MAX.
1.15
10
250
-
-
UNIT
V
µA
µA
pF
ns
ORDERING INFORMATION
PART NO. PACKING
PART NO.
SUFFIX
CODE
PACKING CODE
SUFFIX
R7
S3x
(Note 1)
H
R6
M6
V7
G
V6
Note :
1. "x" defines voltage from 50V (S3A) to 1000V (S3M)
PACKAGE
SMC
SMC
SMC
Matrix SMC
Matrix SMC
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
850 / 7" Plastic reel
3,000 / 13" Plastic reel
EXAMPLE
EXAMPLE P/N
S3AHR7G
PART NO.
S3A
PART NO. PACKING PACKING CODE
SUFFIX
CODE
SUFFIX
H R7
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2 Version:L1708



Taiwan Semiconductor S3A
S3A - S3M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
3.5
3
2.5
2
1.5
1
0.5 RESISTIVE OR
INDUCTIVE LOAD
0
0 25 50 75 100 125
LEAD TEMPERATURE (°C)
150
Fig.2 Typical Junction Capacitance
100
10
f=1.0MHz
Vsig=50mVp-p
1
0.01 0.1 1 10
REVERSE VOLTAGE (V)
100
Fig.3 Typical Reverse Characteristics
100
10 TJ=125°C
Fig.4 Typical Forward Characteristics
100 10
1
10
0.1
UF1DLW
TJ=125°C
TJ=25°C
1
TJ=25°C
0.1
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10.01
0.001
0.3 0.4
0.1
0.6 0.7 0.8
0.5
0.9
Pulse width
Pulse width=300μs
0.6 0.7 01.8% du0t.y9cycle1 1.1
1 1.1 1.2 1.3 1.4 1.5 1.6
1.2
FORWARD VOLTAGE (V)
3 Version:L1708







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)