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T1650H Dataheets PDF



Part Number T1650H
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description high temperature 16A Triacs
Datasheet T1650H DatasheetT1650H Datasheet (PDF)

T1635H-6I, T1635H-6T, T1635H-6G T1650H-6I, T1650H-6T, T1650H-6G Datasheet 16 A - 600 V H-series Snubberless Triac A2 G A1 A2 TO-220AB G A2 A1 A2 G A1 A2 TO-220AB Ins. D²PAK A2 G A1 Product status link T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G Product summary IT(RMS) 16 A VDRM/VRRM 600 V IGT 35 or 50 mA Features • Medium current Triac • 150 °C max. Tj turn-off commutation • Low thermal resistance with clip bonding • Very high 3 quadrant commutation capabiliti.

  T1650H   T1650H


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T1635H-6I, T1635H-6T, T1635H-6G T1650H-6I, T1650H-6T, T1650H-6G Datasheet 16 A - 600 V H-series Snubberless Triac A2 G A1 A2 TO-220AB G A2 A1 A2 G A1 A2 TO-220AB Ins. D²PAK A2 G A1 Product status link T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G Product summary IT(RMS) 16 A VDRM/VRRM 600 V IGT 35 or 50 mA Features • Medium current Triac • 150 °C max. Tj turn-off commutation • Low thermal resistance with clip bonding • Very high 3 quadrant commutation capabilities • Packages are RoHS (2002/95/EC) compliant • UL certified (ref. file E81734) Application The 600 V T1635H and T1650H are especially designed to operate in high power density or universal motor applications such as vacuum cleaner, coffee brewers, and inrush current limiter for inverter based home appliances. Description Available in through-hole or surface mount packages, these Triac series are suitable for general purpose mains power ac switching. These 20 A Triacs provide a very high switching capability up to junction temperatures of 150 °C. The heatsink can be reduced, compared to traditional Triacs, according to the high performance at given junction temperatures. By using an internal ceramic pad, the TO-220AB insulated version provide voltage insulation (rated at 2500 VRMS). The surface mount D²PAK package enables compact SMD based designs for automated manufacturing. DS5310 - Rev 4 - March 2020 For further information contact your local STMicroelectronics sales office. www.st.com T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter IT(RMS) RMS on-state current (full sine wave) ITSM I2t dl/dt VDSM/ VRSM IGM PG(AV) Tstg Tj Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I2t value for fusing Critical rate of rise of on-state current, IG = 2 x IGT, tr ≤ 100 ns, f = 100 Hz Non Repetitive peak off-state voltage Peak gate current Average gate power dissipation Storage temperature range Operating junction temperature range D2PAK, TO-220AB TO-220AB Ins. f = 50 Hz f = 60 Hz f = 120 Hz tp = 10 ms tp = 20 µs Tc = 130 °C Tc = 113 °C t = 20 ms t = 16.7 ms tp = 10 ms Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 150 °C Value 16 160 168 169 100 VDRM/VRRM +100 4 1 -40 to +150 -40 to +150 Unit A A A2s A/µs V A W °C °C Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions IGT(1) VGT VGD VD = 12 V, RL = 33 Ω VD = VDRM, RL = 3.3 kΩ IL IG = 1.2 x IGT IH (2) dV/dt (2) IT = 500 mA, gate open VD = 2/3 x VDRM, gate open (dl/dt)c (2) Without snubber 1. Minimum IGT is guaranteed at 20% of IGT max. 2. For both polarities of A2 referenced to A1. Quadrants I - II - III I - II - III I - III II Tj = 150 °C Tj = 150 °C Max. Max. Min. Max. Max. Max. Min. Min. Value T1635H T1650H 35 50 1.0 0.15 50 90 80 110 35 75 1000 1500 21 28 Unit mA V V mA mA V/µs A/ms DS5310 - Rev 4 page 2/13 T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G Characteristics Symbol VT (1) ITM = 23 A, tp = 380 µs VTO (1) Threshold voltage RD(1) Dynamic resistance Table 3. Static characteristics Test conditions IDRM/ IRRM(2) VDRM = VRRM VD = VR = 400 V, peak voltage VD = VR = 200 V, peak voltage 1. For both polarities of A2 referenced to A1. 2. tp = 380 μs Tj = 25 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150°C Tj = 150 °C Tj = 150 °C Value Unit Max. 1.5 V Max. 0.80 V Max. 23 mΩ 5 µA Max. 4.1 mA Max. 3.5 mA Max. 3.0 Symbol Rth(j-c) Junction to case (AC) Table 4. Thermal resistance Parameter Rth(j-a) Junction to ambient (Scu = 2 cm2) Junction to ambient D2PAK, TO-220AB TO-220AB Ins. D2PAK, TO-220AB TO-220AB Ins. Value Unit 1.15 °C/W 2.1 45 °C/W 60 DS5310 - Rev 4 page 3/13 T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state RMS current 18 P(W) 16 =180 ° 14 12 10 8 6 4 180° 2 0 IT(RMS)(A) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Figure 2. On-state RMS current versus case temperature IT(RMS) (A) 18 16 14 TO220AB ins D²PAK TO-220AB 12 10 8 6 4 2 TC(°C) 0 0 25 50 75 100 125 150 Figure 3. On-state RMS current versus ambient temperature IT(RMS) (A) 4.0 3.5 3.0 2.5 TO220AB ins 2.0 TO-220AB 1.5 1.0 0.5 0.0 0 25 Epoxy printed circuit board FR4, copper thickness = 35 µm = 180° D²PAK SCU= 2 cm² Tamb(°C) 50 75 100 125 150 Figure 4. Variation of thermal impedance versus pulse duration 1.0E+00 K=[Zth /Rth] Zth(j-c) Zth(j-a) 1.0E-01 1.0E-02 1.0E-03 1.0E-02 1.0E-01 t P(s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 DS5310 - Rev 4 page 4/13 T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G Characteristics (curves) Figure 5. On-state characteristics (maximum values) 1000 ITM (A) 1.


GA100SICP12-227 T1650H 1N4728A


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