Document
T1635H-6I, T1635H-6T, T1635H-6G T1650H-6I, T1650H-6T, T1650H-6G
Datasheet
16 A - 600 V H-series Snubberless Triac
A2
G A1
A2
TO-220AB
G A2 A1
A2
G A1 A2
TO-220AB Ins.
D²PAK
A2 G A1
Product status link
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Product summary
IT(RMS)
16 A
VDRM/VRRM
600 V
IGT
35 or 50 mA
Features
• Medium current Triac • 150 °C max. Tj turn-off commutation • Low thermal resistance with clip bonding • Very high 3 quadrant commutation capabilities • Packages are RoHS (2002/95/EC) compliant • UL certified (ref. file E81734)
Application
The 600 V T1635H and T1650H are especially designed to operate in high power density or universal motor applications such as vacuum cleaner, coffee brewers, and inrush current limiter for inverter based home appliances.
Description
Available in through-hole or surface mount packages, these Triac series are suitable for general purpose mains power ac switching. These 20 A Triacs provide a very high switching capability up to junction temperatures of 150 °C. The heatsink can be reduced, compared to traditional Triacs, according to the high performance at given junction temperatures. By using an internal ceramic pad, the TO-220AB insulated version provide voltage insulation (rated at 2500 VRMS). The surface mount D²PAK package enables compact SMD based designs for automated manufacturing.
DS5310 - Rev 4 - March 2020 For further information contact your local STMicroelectronics sales office.
www.st.com
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings (limiting values)
Symbol
Parameter
IT(RMS) RMS on-state current (full sine wave)
ITSM
I2t
dl/dt
VDSM/ VRSM IGM PG(AV) Tstg
Tj
Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C)
I2t value for fusing Critical rate of rise of on-state current, IG = 2 x IGT, tr ≤ 100 ns, f = 100 Hz
Non Repetitive peak off-state voltage
Peak gate current Average gate power dissipation Storage temperature range Operating junction temperature range
D2PAK, TO-220AB TO-220AB Ins. f = 50 Hz f = 60 Hz
f = 120 Hz
tp = 10 ms tp = 20 µs
Tc = 130 °C Tc = 113 °C
t = 20 ms t = 16.7 ms tp = 10 ms Tj = 150 °C
Tj = 25 °C Tj = 150 °C Tj = 150 °C
Value
16
160 168 169 100 VDRM/VRRM +100
4 1 -40 to +150 -40 to +150
Unit
A
A A2s A/µs V A W °C °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
IGT(1) VGT VGD
VD = 12 V, RL = 33 Ω VD = VDRM, RL = 3.3 kΩ
IL
IG = 1.2 x IGT
IH (2) dV/dt (2)
IT = 500 mA, gate open VD = 2/3 x VDRM, gate open
(dl/dt)c (2) Without snubber
1. Minimum IGT is guaranteed at 20% of IGT max. 2. For both polarities of A2 referenced to A1.
Quadrants
I - II - III I - II - III
I - III II
Tj = 150 °C Tj = 150 °C
Max. Max. Min. Max. Max. Max. Min. Min.
Value
T1635H
T1650H
35
50
1.0
0.15
50
90
80
110
35
75
1000
1500
21
28
Unit
mA V V
mA
mA V/µs A/ms
DS5310 - Rev 4
page 2/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics
Symbol VT (1) ITM = 23 A, tp = 380 µs VTO (1) Threshold voltage RD(1) Dynamic resistance
Table 3. Static characteristics Test conditions
IDRM/ IRRM(2)
VDRM = VRRM VD = VR = 400 V, peak voltage
VD = VR = 200 V, peak voltage
1. For both polarities of A2 referenced to A1. 2. tp = 380 μs
Tj = 25 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150°C Tj = 150 °C Tj = 150 °C
Value Unit
Max. 1.5
V
Max. 0.80 V
Max. 23 mΩ
5
µA
Max.
4.1 mA
Max. 3.5 mA
Max. 3.0
Symbol Rth(j-c) Junction to case (AC)
Table 4. Thermal resistance Parameter
Rth(j-a)
Junction to ambient (Scu = 2 cm2) Junction to ambient
D2PAK, TO-220AB
TO-220AB Ins.
D2PAK, TO-220AB
TO-220AB Ins.
Value Unit
1.15 °C/W
2.1
45 °C/W
60
DS5310 - Rev 4
page 3/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Maximum power dissipation versus on-state RMS current
18 P(W)
16
=180 °
14
12
10
8
6
4
180°
2
0
IT(RMS)(A)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Figure 2. On-state RMS current versus case temperature
IT(RMS) (A)
18 16 14
TO220AB ins
D²PAK TO-220AB
12
10
8
6
4
2
TC(°C)
0
0
25
50
75
100
125
150
Figure 3. On-state RMS current versus ambient temperature
IT(RMS) (A)
4.0
3.5
3.0
2.5
TO220AB ins
2.0
TO-220AB
1.5
1.0
0.5
0.0
0
25
Epoxy printed circuit board FR4, copper thickness = 35 µm
= 180° D²PAK SCU= 2 cm²
Tamb(°C)
50
75
100
125
150
Figure 4. Variation of thermal impedance versus pulse duration
1.0E+00 K=[Zth /Rth]
Zth(j-c)
Zth(j-a)
1.0E-01
1.0E-02 1.0E-03
1.0E-02
1.0E-01
t P(s)
1.0E+00 1.0E+01 1.0E+02 1.0E+03
DS5310 - Rev 4
page 4/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics (curves)
Figure 5. On-state characteristics (maximum values)
1000 ITM (A)
1.