OSG65R900AF

, OSG65R900AF, OSG65R900DF, OSG65R900FF, OSG65R900PF Enhancement Mode N-Channel Power MOSFET  General Description OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.  VDS, min@Tjmax  ID, pulse  RDS(ON), max @ VGS=10 V  Qg 700 V 15 A 900 mΩ 7.6 nC  Schematic and Package Information Schematic Diagram Pin Assignment Top View TO251 TO252 TO220F TO220 OSG65R900AF OSG65R900DF OSG65R900FF OSG65R900PF  Absolute Maximum Ratings at Tj=25℃ unless otherwise noted Parameter Drain source voltage Gate source voltage Continuous drain current1), TC=25 ℃ Continuous drain current1), TC=100 ℃ Pulsed drain current2), TC=25 ℃ Power dissipation3) for TO251, TO252, TO220 , TC=25 ℃ Power dissipation3) for TO220F , TC=25 ℃ Single pulsed avalanche energy5) MOSFET dv/dt rug...