Power MOSFET. OSG65R900D Datasheet

OSG65R900D MOSFET. Datasheet pdf. Equivalent


Oriental Semiconductor OSG65R900D
General Description
OSG65R900A,OSG65R900D,OSG65R900F
Enhancement Mode N-Channel Power MOSFET
OSG65R900x series use advanced GreenMOSTM
technology to provide low RDS(ON), low gate
charge, fast switching and excellent avalanche
characteristics. This device is suitable for active
power factor correction and switching mode
power supply applications.
VDS@Tjmax
ID
RDS(ON),max@VGS=10V
700V
5A
0.9Ω
TO-251,TO-252,TO-220F Package Information
Schematic Diagram
Pin Assignment-Top View
TO-251
OSG65R900A
TO-252
OSG65R900D
TO-220F
OSG65R900F
Absolute Maximum RatingsTA=25unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous(Note 1)
Drain Current- Pulsed(Note 2)
Power Dissipation(Note 3) for TO-251,TO-252
Power Dissipation(Note 3) for TO-220F
Single Pulsed-Avalanche Energy(Note 6)
Operation and Storage Junction Temperature
Symbol
VDS
VGS
ID
IDM
PD
EAS
TSTGTJ
Value
650
±30
5
15
37
26
136
-55 to 150
Unit
V
V
A
A
W
mJ
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OSG65R900D Datasheet
Recommendation OSG65R900D Datasheet
Part OSG65R900D
Description Enhancement Mode N-Channel Power MOSFET
Feature OSG65R900D;  General Description OSG65R900A,OSG65R900D,OSG65R900F Enhancement Mode N-Channel Power MOSFET OSG.
Manufacture Oriental Semiconductor
Datasheet
Download OSG65R900D Datasheet




Oriental Semiconductor OSG65R900D
Thermal Characteristics
OSG65R900A,OSG65R900D,OSG65R900F
Enhancement Mode N-Channel Power MOSFET
Parameter
Symbol
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (Note 4)
RθJC
RθJA
Value
TO251/TO252 TO220F
3.4 4.8
62 62.5
Unit
°C/W
°C/W
Electrical CharacteristicsTA=25unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-state Resistance
Gate-Source Leakage Current
Drain-to-Source leakage current
Symbol
BVDSS
VGS(th)
RDS(ON)
IGSS
IDSS
Min.
650
700
2.0
Typ.
771
0.72
2.11
Max.
4.0
0.9
100
-100
1
Unit
Test condition
VGS=0V, ID=250μA
V VGS=0V,ID=250μA,
Tj=150
V VDS=VGS, ID=250μA
VGS=10V,ID=3A
Ω VGS=10V,ID=3A,
Tj=150
VGS=30V
nA
VGS=-30V
μA VDS=650V,VGS=0V
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
343 pF VGS=0V,
29 pF VDS=50V,
1.5 pF ƒ=1MHZ
15 ns
VGS=10V,
11 ns VDS=380V,
23 ns RG=25Ω
22 ns ID=5A
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Oriental Semiconductor OSG65R900D
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
OSG65R900A,OSG65R900D,OSG65R900F
Enhancement Mode N-Channel Power MOSFET
8.7 nC ID=5A,
2.4 nC VDS=480V,
3.5 nC VGS=10V
Body Diode Characteristics
Body-diode Forward Current(NOTE 2)
Pulsed Source Current
Inverse Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISP
VSD
trr
Qrr
5
A VGS<Vth
15
1.3 V IS=5A,VGS=0V
157
1.03
ns IS=5A,VGS=0V
μC di/dt=100A/μs
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