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BAT54XV2

ON Semiconductor

Schottky Barrier Diodes

Schottky Barrier Diodes BAT54XV2 These Schottky barrier diodes are designed for high−speed switching applications, circu...


ON Semiconductor

BAT54XV2

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Description
Schottky Barrier Diodes BAT54XV2 These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features Extremely Fast Switching Speed Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 200 mW 2.0 mW/°C Forward Current (DC) IF 200 Max mA Non−Repetitive Peak Forward Current, tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current IFRM 300 mA Pulse Wave = 1 sec, Duty Cycle = 66% Thermal Resistance, Junction−to−Ambient RqJA 635 °C/W Junction and Storage Temperature TJ, Tstg −55 to 125 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad. DATA SHEET www.onsemi.com 30 VOLT SILICON HOT−CARRIER DETECT...




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