Switching Diode. 1N4148W-G Datasheet

1N4148W-G Diode. Datasheet pdf. Equivalent


Vishay 1N4148W-G
www.vishay.com
1N4148W-G
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
1N4148W-G 1N4148W-G3-08 or 1N4148W-G3-18
TYPE MARKING
AH
CIRCUIT CONFIGURATION
Single
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Repetitive peak reverse voltage
VR
VRRM
Average rectified current half wave rectification with
resistive load (1)
f 50 Hz
IF(AV)
Surge forward current
Power dissipation (1)
t < 1 s and Tj = 25 °C
IFSM
Ptot
VALUE
75
100
150
500
350
UNIT
V
V
mA
mA
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
Operating temperature range
Top
Note
(1) Valid provided that electrodes are kept at ambient temperature.
VALUE
357
150
-65 to +150
-55 to +150
UNIT
K/W
°C
°C
°C
Rev. 1.3, 22-Feb-18
1
Document Number: 81139
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


1N4148W-G Datasheet
Recommendation 1N4148W-G Datasheet
Part 1N4148W-G
Description Small Signal Fast Switching Diode
Feature 1N4148W-G; www.vishay.com 1N4148W-G Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silic.
Manufacture Vishay
Datasheet
Download 1N4148W-G Datasheet




Vishay 1N4148W-G
www.vishay.com
1N4148W-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
IF = 10 mA
VF
IF = 100 mA
VF
VR = 20 V
IR
Leakage current
VR = 75 V
IR
VR = 100 V
IR
VR = 20 V, TJ = 150 °C
IR
Diode capacitance
VF = VR = 0 V
CD
Tested with 50 mA pulses,
Voltage rise when switching ON tp = 0.1 μs, rise time < 30 ns,
Vfr
fp = (5 to 100) kHz
Reverse recovery time
IF = 10 mA, IR = 1 mA,
VR = 6 V, RL = 100
trr
MAX.
1
1.2
25
5
100
50
4
2.5
4
UNIT
V
V
nA
μA
μA
μA
pF
V
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
103
102
Tj = 100 °C
Tj = 25 °C
10
1
10-1
10-2
0
1
2
17437
VF (V)
500
450
400
350
300
250
200
150
100
50
0
0
50
100
150
20809
Tamb - Ambient Temperature (°C)
Fig. 1 - Forward Characteristics
Fig. 3 - Admissible Power Dissipation vs.
Ambient Temperature
104
5
2
103
5
2
102
5
2
10
5
2
10-2
17438
Tj = 25 °C
f = 1 kHz
10-1
1
10
102
IF (mA)
Fig. 2 - Dynamic Forward Resistance vs.
Forward Current
1.1
Tj = 25 °C
f = 1 MHz
1.0
0.9
0.8
0.7
0
2
4
6
8
10
17440
VR (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.3, 22-Feb-18
2
Document Number: 81139
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay 1N4148W-G
www.vishay.com
1N4148W-G
Vishay Semiconductors
104
5
2
103
5
2
102
5
2
10
5
2
1
0
17441
VR = 20 V
100
200
Tj (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
100
5
4
3
2
10
5
4
0.1
3
2 0.2
1 0.5
5
4
3
2
0.1
10-5
2
17442
n=0
5 10-4
I
n = t /T T = 1/f
P
P
I
FRM
t
P
t
T
2
5 10-3
2
5 10-2
2
tP (s)
5 10-1
2
51
2
Fig. 6 - Admissible Repetitive Peak Forward Current vs.
Pulse Duration
5 10
Rev. 1.3, 22-Feb-18
3
Document Number: 81139
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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