SWITCHING DIODE. 1N4148W Datasheet

1N4148W DIODE. Datasheet pdf. Equivalent


EIC 1N4148W
Certificate TH97/10561QM
Certificate TW00/17276EM
1N4148W
PRV : 100 Volts
IO : 150 mA
SMALL SIGNAL
FAST SWITCHING DIODE
SOD-123
2.7
2.6
FEATURES :
* Silicon Epitaxial Planar Diode
* Fast switching diodes.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-123 plastic Case
* Weight : approx. 0.01 g
* Marking Code : " W1"
3.9
3.7
Dimensions in millimeters
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Current Half Wave Rectification
with Resist. Load, f 50 Hz
Surge Forward Current at t < 1 s and Tj = 25 °C
Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IF(AV)
IFSM
Ptot
RthJA
Tj
TSTG
Value
100
75
150 1)
500
400 1)
450 1)
150
-65 to + 150
ELECTRICAL CHARACTERISTICS (Rating at Ta = 25 °C unless otherwise specified)
Parameter
Test Condition
Symbol
Forward Voltage
Leakage Current
Capacitance
Voltage Rise when
IF = 10 mA
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 °C
VF = VR = 0 V
tested with 50 mA pulses
VF
IR
IR
IR
Ctot
Switching On
Reverse Recovery Time
Rectification Efficiency
tp = 0.1 μs, Rise Time < 30 ns,
fp = 5 to 100 kHz
IF = 10 mA, IR = 1 mA,
VR = 6 V, RL = 100 Ω
f = 100 MHz, VRF = 2 V
Vfr
trr
ηv
Note : (1) Valid provided that electrodes are kept at ambient temperature
Min.
-
-
-
-
-
-
-
0.45
Typ.
-
-
-
-
-
-
-
-
Max.
1.0
25
5
50
4
2.5
4
-
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Unit
V
nA
μA
μA
pF
V
ns
-
Page 1 of 3
Rev. 01 : May 19, 2006


1N4148W Datasheet
Recommendation 1N4148W Datasheet
Part 1N4148W
Description SMALL SIGNAL FAST SWITCHING DIODE
Feature 1N4148W; Certificate TH97/10561QM Certificate TW00/17276EM 1N4148W PRV : 100 Volts IO : 150 mA SMALL SIGNA.
Manufacture EIC
Datasheet
Download 1N4148W Datasheet




EIC 1N4148W
Certificate TH97/10561QM
Certificate TW00/17276EM
RATINGS AND CHARACTERISTIC CURVES (1N4148W)
Forward charecteristics
mA
103
102
I F 10
Tj = 100 °C
Tj = 25 °C
1
10-1
10-2 0
1
VF
2V
Admissible power dissipation
versus ambient temperture
For conditions, see footnote in table
"Absolute Maximum Ratings"
mW
1000
900
800
P tot 700
600
500
400
300
200
100
0
0 100
200 °C
T amb
Dynamic forward resistance
versus forward current
V
104
5
RF
2
103
5
2
102
5
Tj = 25 °C
f = 1 kHz
2
10
5
2
1
10-2
10-1
1 10
IF
102 mA
Relative capacitance
versus reverse voltage
C tot (V R ) 1.1
C tot (0 V)
1.0
Tj = 25 °C
f = 1 kHz
0.9
0.8
0.7
024
68
VR
10 V
Page 2 of 3
Rev. 01 : May 19, 2006



EIC 1N4148W
Certificate TH97/10561QM
Certificate TW00/17276EM
RATINGS AND CHARACTERISTIC CURVES (1N4148W)
Leakage Current
versus junction temperature
nA
104
5
2
103
IR 5
2
102
5
2
10
5
2
1
0
VR = 20 V
100
Tj
200 °C
Admissible repetitive peak forward current versus pulse duration
For conditions, see footnote in table " Absolute Maximum Ratings "
A
100
I FRM
45
3
2
10 n = 0
45
3 0.1
2
0.2
1 0.5
45
3
2
0.110-5 2
5 10-4 2
5 10-3 2
5 10-2 2
I
ν= t p /T
T= 1/f p
t p I FRM
T
t
5 10-1 2
tp
5 12
5 10 s
Page 3 of 3
Rev. 01 : May 19, 2006





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