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1N4728A to 1N4761A
Vishay Semiconductors
Zener Diodes
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
FEATURES • Silicon planar power Zener diodes • For use in stabilizing and clipping circuits with
high power rating • Standard Zener voltage tolerance is ± 5 % • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
3.3 to 75
Test current IZT VZ specification Circuit configuration
3.3 to 76 Thermal equilibrium
Single
UNIT V mA
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
1N4728A to 1N4761A
1N4728A to 1N4761A -series-TR
1N4728A to 1N4761A
1N4728A to 1N4761A-series-TAP
TAPED UNITS PER REEL
5000 per 13" reel
5000 per ammopack (52 mm tape)
MINIMUM ORDER QUANTITY 25 000/box
25 000/box
PACKAGE
PACKAGE NAME DO-41 (DO-204AL)
WEIGHT 310 mg
MOLDING COMPOUND FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY LEVEL
MSL level 1 (according J-STD-020)
SOLDERING CONDITIONS Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Ptot
Zener current
Thermal resistance junction to ambient air
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
IZ RthJA
Junction temperature
Tj
Storage temperature range
Tstg
Forward voltage (max.)
IF = 200 mA
VF
VALUE 1300 PV/VZ 110 175
-65 to +175 1.2
UNIT mW mA K/W °C °C
V
Rev. 2.5. 25-Nov -2021
1
Document Number: 85816
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
1N4728A to 1N4761A
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE RANGE (1)
VZ at IZT1
TEST CURRENT
IZT1
IZT2
REVERSE LEAKAGE CURRENT
DYNAMIC RESISTANCE
f = 1 kHz
SURGE CURRENT (3)
IR at VR
ZZT at IZT1 ZZK at IZT2
IR
V
mA mA
μA
V
Ω
mA
REGULATOR CURRENT (2)
IZM mA
1N4728A
NOM. 3.3
MAX.
76
1
100
1
TYP. 10
MAX. 400
1380
MAX. 276
1N4729A
3.6
69
1
100
1
10
400
1260
252
1N4730A
3.9
64
1
50
1
9
400
1190
234
1N4731A
4.3
58
1
10
1
9
400
1070
217
1N4732A
4.7
53
1
10
1
8
500
970
193
1N4733A
5.1
49
1
10
1
7
550
890
178
1N4734A
5.6
45
1
10
2
5
600
810
162
1N4735A
6.2
41
1
10
3
2
700
730
146
1N4736A
6.8
37
1
10
4
3.5
700
660
133
1N4737A
7.5
34
0.5
10
5
4
700
605
121
1N4738A
8.2
31
0.5
10
6
4.5
700
550
110
1N4739A
9.1
28
0.5
10
7
5
700
500
100
1N4740A
10
25 0.25
10
7.6
7
700
454
91
1N4741A
11
23 0.25
5
8.4
8
700
414
83
1N4742A
12
21 0.25
5
9.1
9
700
380
76
1N4743A
13
19 0.25
5
9.9
10
700
344
69
1N4744A
15
17 0.25
5
11.4
14
700
304
61
1N4745A
16
15.5 0.25
5
12.2
16
700
285
57
1N4746A
18
14 0.25
5
13.7
20
750
250
50
1N4747A
20
12.5 0.25
5
15.2
22
750
225
45
1N4748A
22
11.5 0.25
5
16.7
23
750
205
41
1N4749A
24
10.5 0.25
5
18.2
25
750
190
38
1N4750A
27
9.5 0.25
5
20.6
35
750
170
34
1N4751A
30
8.5 0.25
5
22.8
40
1000
150
30
1N4752A
33
7.5 0.25
5
25.1
45
1000
135
27
1N4753A
36
7
0.25
5
27.4
50
1000
125
25
1N4754A
39
6.5 0.25
5
29.7
60
1000
115
23
1N4755A
43
6
0.25
5
32.7
70
1500
110
22
1N4756A
47
5.5 0.25
5
35.8
80
1500
95
19
1N4757A
51
5
0.25
5
38.8
95
1500
90
18
1N4758A
56
4.5 0.25
5
42.6
110
2000
80
16
1N4759A
62
4
0.25
5
47.1
125
2000
70
14
1N4760A
68
3.7 0.25
5
51.7
150
2000
65
13
1N4761A
75
3.3 0.25
5
56
175
2000
60
12
Notes
(1) Based on DC measurement at thermal equilibrium while maintaining the lead temperature (TL) at 30 °C + 1 °C, 9.5 mm (3/8") from the diode body
(2) Valid provided that electrodes at a distance of 4 mm from case are kept at ambient temperature (3) tp = 10 ms.
Rev. 2.5. 25-Nov -2021
2
Document Number: 85816
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1N4728A to 1N4761A
Vishay Semiconductors
Ptot - Power Dissipation (mW)
1400
1200
1000
800
600
400
200
0
0
50
100
150
200
Tamb- Ambient Temperature (°C)
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature Ptot = f (Tamb)
PACKAGE DIMENSIO.